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AS4DDR232M64PBG-5/XT 参数 Datasheet PDF下载

AS4DDR232M64PBG-5/XT图片预览
型号: AS4DDR232M64PBG-5/XT
PDF下载: 下载PDF文件 查看货源
内容描述: 32Mx64 DDR2 SDRAM集成塑封微电路 [32Mx64 DDR2 SDRAM iNTEGRATED Plastic Encapsulated Microcircuit]
分类和应用: 动态存储器双倍数据速率
文件页数/大小: 28 页 / 363 K
品牌: AUSTIN [ AUSTIN SEMICONDUCTOR ]
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iPEM  
2.1 Gb SDRAM-DDR2  
Austin Semiconductor, Inc.  
AS4DDR232M64PBG  
NOTES:  
3 . Wait a minimum of 400ns, then issue a PRECHARGE ALL command/  
4 . Issue an LOAD MODE command to the EMR(2). (To issue an  
EMR(2) command, provide LOW to BA0, provide HIGH to BA1.)  
5. Issue a LOAD MODE command to the EMR(3). (To issue an EMR(3)  
command, provide HIGH to BA0 and BA1.)  
6. Issue an LOAD MODE command to the EMR to enable DLL. To  
issue a DLL ENABLE command, provide LOW to BA1 and A0,  
provide HIGH to BA0. Bits E7, E8, and E9 can be set to “0” or “1”;  
Micron recommends setting them to “0.”  
1 . Applying power; if CKE is maintained below 0.2 x VCCQ, outputs  
remain disabled. To guarantee RTT (ODT resistance) is off, VREF  
must be valid and a low level must be applied to the ODT ball (all  
other inputs may be undefined, I/Os and outputs must be less  
than VCCQ during voltage ramp time to avoid DDR2 SDRAM device  
latch-up). At least one of the following two sets of conditions (A  
or B) must be met to obtain a stable supply state (stable supply  
defined as VCC, VCCQ,VREF, and VTT are between their  
minimum and maximum values as stated in DC Operating  
Conditions table):  
A. (single power source) The VCC voltage ramp from 300mV to  
VCC(MIN) must take no longer than 200ms; during the VCC  
voltage ramp, |VCC  
ramping is complete (when VCCQ crosses VCC (MIN), DC  
Operating Conditions table specifications apply.  
• VCC, VCCQ are driven from a single power converter output  
• VTT is limited to 0.95V MAX  
• VREF tracks VCCQ/2; VREF must be within 3V with respect  
to VCCQ/2 during supply ramp time.  
7. Issue  
clock input  
a
LOAD MODE command for DLL RESET. 200 cycles of  
is required to lock the DLL. (To issue a DLL RESET,  
provide HIGH to A8 and provide LOW to BA1, and BA0.) CKE  
must be HIGH the entire time.  
8. Issue PRECHARGE ALL command.  
9. Issue two or more REFRESH commands, followed by a dummy  
WRITE.  
- VCCQ| < 0.3V. Once supply voltage  
10. Issue  
a LOAD MODE command with LOW to A8 to initialize  
device operation (i.e., to program operating parameters without  
resetting the DLL).  
11. Issue a LOAD MODE command to the EMR to enable OCD default  
by setting bits E7, E8, and E9 to “1,” and then setting all other  
desired parameters.  
12. Issue a LOAD MODE command to the EMR to enable OCD exit  
by setting bits E7, E8, and E9 to “0,” and then setting all other  
desired parameters.  
• VCCQ > VREF at all times  
B. (multiple power sources) VCC e” VCCQ must be maintained  
during supply voltage ramping, for both AC and DC levels, until  
supply voltage ramping completes (VCCQ crosses VCC [MIN]).  
Once supply voltage ramping is complete, DC Operating  
Conditions table specifications apply.  
• Apply VCC before or at the same time as VCCQ; VCC voltage  
ramp time must be  
300mV to VCC (MIN)  
• Apply VCCQ before or at the same time as VTT; the VCCQ  
voltage ramp time from when VCC (MIN) is achieved to when  
VCCQ (MIN) is achieved must be  
ramping, current can be supplied from VCC through the device  
to VCCQ  
• VREF must track VCCQ/2, VREF must be within 0.3V with  
respect to VCCQ/2 during supply ramp time; VCCQ > VREF  
must be met at all times  
13. Issue  
a LOAD MODE command with LOW to A8 to initialize  
device operation (i.e., to program operating parameters without  
resetting the DLL).  
14. Issue a LOAD MODE command to the EMR to enable OCD default  
by setting bits E7,E8, and E9 to “1,” and then setting all other  
desired parameters.  
15. Issue a LOAD MODE command to the EMR to enable OCD exit  
by setting bits E7, E8, and E9 to “0,” and then setting all other  
desired parameters. The DDR2 SDRAM is now initialized and  
ready for normal operation 200 clocks after DLL RESET (in  
step 7).  
< 200ms from when VCC ramps from  
< 500ms; while VCC is  
Apply VTT; The VTT voltage ramp time from when VCCQ  
(MIN) is achieved to when VTT (MIN) is achieved must be no  
greater than 500ms  
2. For a minimum of 200µs after stable power and clock (CK, CK#),  
apply NOP or DESELECT commands and take CKE HIGH.  
Austin Semiconductor, Inc.  
Austin, Texas 512.339.1188 www.austinsemiconductor.com  
AS4DDR232M64PBG  
Rev. 1.3 6/09  
7