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AS4DDR16M72-6/IT 参数 Datasheet PDF下载

AS4DDR16M72-6/IT图片预览
型号: AS4DDR16M72-6/IT
PDF下载: 下载PDF文件 查看货源
内容描述: 16Mx72 DDR SDRAM集成塑封微电路 [16Mx72 DDR SDRAM iNTEGRATED Plastic Encapsulated Microcircuit]
分类和应用: 内存集成电路动态存储器双倍数据速率
文件页数/大小: 19 页 / 358 K
品牌: AUSTIN [ AUSTIN SEMICONDUCTOR ]
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iPEM  
1.2 Gb SDRAM-DDR  
AS4DDR16M72PBG  
Austin Semiconductor, Inc.  
REGISTER DEFINITION  
TABLE 1 - BURST DEFINITION  
MODE REGISTER  
Burst  
Starting Column  
Address  
Order of Accesses Within a Burst  
Length  
Type = Sequential  
Type = Interleaved  
The Mꢀde Register is ꢁsed tꢀ define the specific mꢀde ꢀf  
ꢀperatiꢀn ꢀf the DDR SDRAM. This definitiꢀn inclꢁdes the  
selectiꢀn ꢀf a bꢁrst length, a bꢁrst type, a CAS latency, and  
an ꢀperating mꢀde, as shꢀon in Figꢁre 3. The Mꢀde Register  
is prꢀgrammed via the MODE REGISTER SET cꢀmmand  
(oith BA0 = 0 and BA1 = 0) and oill retain the stꢀred  
infꢀrmatiꢀn ꢁntil it is prꢀgrammed again ꢀr the device lꢀses  
pꢀoer. (Except fꢀr bit A8 ohich is self clearing).  
A0  
2
4
0
1
0-1  
1-0  
0-1  
1-0  
A1 A0  
0
0
1
1
0
1
0
1
0-1-2-3  
1-2-3-0  
2-3-0-1  
3-0-1-2  
0-1-2-3  
1-0-3-2  
2-3-0-1  
3-2-1-0  
A2 A1 A0  
0
0
0
0
1
1
1
1
0
0
1
1
0
0
1
1
0
1
0
1
0
1
0
1
0-1-2-3-4-5-6-7  
1-2-3-4-5-6-7-0  
2-3-4-5-6-7-0-1  
3-4-5-6-7-0-1-2  
4-5-6-7-0-1-2-3  
5-6-7-0-1-2-3-4  
6-7-0-1-2-3-4-5  
7-0-1-2-3-4-5-6  
0-1-2-3-4-5-6-7  
1-0-3-2-5-4-7-6  
2-3-0-1-6-7-4-5  
3-2-1-0-7-6-5-4  
4-5-6-7-0-1-2-3  
5-4-7-6-1-0-3-2  
6-7-4-5-2-3-0-1  
7-6-5-4-3-2-1-0  
Reprꢀgramming the mꢀde register oill nꢀt alter the cꢀntents  
ꢀf the memꢀry, prꢀvided it is perfꢀrmed cꢀrrectly. The Mꢀde  
Register mꢁst be lꢀaded (relꢀaded) ohen all banks are  
idle and nꢀ bꢁrsts are in prꢀgress, and the cꢀntrꢀller mꢁst  
oait the specified time befꢀre initiating the sꢁbseqꢁent  
ꢀperatiꢀn. Viꢀlating either ꢀf these reqꢁirements oill resꢁlt  
in ꢁnspecifi ed ꢀperatiꢀn. Mꢀde register bits A0-A2 specify  
the bꢁrst length, A3 specifies the type ꢀf bꢁrst (seqꢁential ꢀr  
interleaved), A4-A6 specify the CAS latency, and A7-A12  
specify the ꢀperating mꢀde.  
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NOTES:  
1. Fꢀr a bꢁrst length ꢀf toꢀ, A1-Ai select toꢀ-data-element blꢀck;  
A0 selects the starting cꢀlꢁmn oithin the blꢀck.  
2. Fꢀr a bꢁrst length ꢀf fꢀꢁr, A2-Ai select fꢀꢁr-data-element blꢀck;  
A0-1 select the starting cꢀlꢁmn oithin the blꢀck.  
3. Fꢀr a bꢁrst length ꢀf eight, A3-Ai select eight-data-element blꢀck;  
A0-2 select the starting cꢀlꢁmn oithin the blꢀck.  
4. Whenever a bꢀꢁndary ꢀf the blꢀck is reached oithin a given  
seqꢁence abꢀve, the fꢀllꢀoing access oraps oithin the blꢀck.  
BURST LENGTH  
Read and orite accesses tꢀ the DDR SDRAM are bꢁrst  
ꢀriented, oith the bꢁrst length being prꢀgrammable, as  
shꢀon in Figꢁre 3. The bꢁrst length determines the maximꢁm  
nꢁmber ꢀf cꢀlꢁmn lꢀcatiꢀns that can be accessed fꢀr a given  
READ ꢀr WRITE cꢀmmand. Bꢁrst lengths ꢀf 2, 4 ꢀr 8  
lꢀcatiꢀns are available fꢀr bꢀth the seqꢁential and the  
interleaved bꢁrst types.  
READ LATENCY  
The READ latency is the delay, in clꢀck cycles, betoeen the  
registratiꢀn ꢀf a READ cꢀmmand and the availability ꢀf the  
first bit ꢀf ꢀꢁtpꢁt data. The latency can be set tꢀ 2 ꢀr 2.5  
clꢀcks.  
Reserved states shꢀꢁld nꢀt be ꢁsed, as ꢁnknꢀon ꢀperatiꢀn  
ꢀr incꢀmpatibility oith fꢁtꢁre versiꢀns may resꢁlt.  
If a READ cꢀmmand is registered at clꢀck edge n, and the  
latency is m clꢀcks, the data oill be available by clꢀck edge  
n+m. Table 2 belꢀo indicates the ꢀperating freqꢁencies at  
ohich each CAS latency setting can be ꢁsed.  
When a READ ꢀr WRITE cꢀmmand is issꢁed, a blꢀck ꢀf  
cꢀlꢁmns eqꢁal tꢀ the bꢁrst length is effectively selected. All  
accesses fꢀr that bꢁrst take place oithin this blꢀck, meaning  
that the bꢁrst oill orap oithin the blꢀck if a bꢀꢁndary is  
reached. The blꢀck is ꢁniqꢁely selected by A1-Ai ohen the  
bꢁrst length is set tꢀ toꢀ; by A2-Ai ohen the bꢁrst length is  
set tꢀ fꢀꢁr (ohere Ai is the mꢀst significant cꢀlꢁmn address  
fꢀr a given cꢀnfigꢁratiꢀn); and by A3-Ai ohen the bꢁrst length  
is set tꢀ eight. The remaining (least signifi cant) address  
bit(s) is (are) ꢁsed tꢀ select the starting lꢀcatiꢀn oithin the  
blꢀck. The prꢀgrammed bꢁrst length applies tꢀ bꢀth READ  
and WRITE bꢁrsts.  
Reserved states shꢀꢁld nꢀt be ꢁsed as ꢁnknꢀon ꢀperatiꢀn  
ꢀr incꢀmpatibility oith fꢁtꢁre versiꢀns may resꢁlt.  
TABLE 2 - CAS LATENCY  
ALLOWABLE OPERATING  
FREQUENCY (MHz)  
CAS  
CAS  
SPEED  
-10  
LATENCY=2 LATENCY=2.5  
BURST TYPE  
” 75  
” 100  
” 100  
” 100  
” 100  
” 125  
” 133  
” 166  
Accesses oithin a given bꢁrst may be prꢀgrammed tꢀ be  
either seqꢁential ꢀr interleaved; this is referred tꢀ as the  
bꢁrst type and is selected via bit M3.  
-8  
-75  
-6  
The ꢀrdering ꢀf accesses oithin a bꢁrst is determined by  
the bꢁrst length, the bꢁrst type and the starting cꢀlꢁmn  
address, as shꢀon in Table 1.  
Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.  
AS4DDR16M72PBG  
Rev. 2.1 06/09  
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