AO4938
FET2: TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10
1200
1000
800
600
400
200
0
VDS=15V
ID=8A
8
Ciss
6
4
Coss
2
Crss
0
0
5
10
15
VDS (Volts)
20
25
30
0
3
6
9
12
15
Qg (nC)
Figure 7: Gate-Charge Characteristics
Figure 8: Capacitance Characteristics
1000
100
10
100.0
10.0
1.0
TA=25°C
10µs
RDS(ON)
100µs
1ms
10ms
DC
0.1
TJ(Max)=150°C
TA=25°C
10s
0.0
1
0.01
0.1
1
10
100
0.00001
0.001
0.1
10
1000
-VDS (Volts)
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-
to-Ambient (Note F)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note F)
10
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
1
RθJA=90°C/W
0.1
0.01
PD
Ton
T
0.001
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
Rev 3: Mar. 2011
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AOS [ ALPHA & OMEGA SEMICONDUCTORS ]
