AO4938
FET1 Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min
Typ
Max
Units
STATIC PARAMETERS
ID=250uA, VGS=0V
VDS=30V, VGS=0V
BVDSS
Drain-Source Breakdown Voltage
30
V
0.1
20
IDSS
Zero Gate Voltage Drain Current
mA
TJ=125°C
TJ=125°C
VDS=0V, VGS=±20V
IGSS
Gate-Body leakage current
Gate Threshold Voltage
On state drain current
100
2.2
nA
V
VGS(th)
ID(ON)
VDS=VGS ID=250µA
1.1
60
1.65
V
GS=10V, VDS=5V
A
VGS=10V, ID=8.8A
13.3
20
16
25
22
mΩ
RDS(ON)
Static Drain-Source On-Resistance
VGS=4.5V, ID=7A
VDS=5V, ID=8.8A
IS=1A,VGS=0V
18
mΩ
S
gFS
VSD
IS
Forward Transconductance
Diode Forward Voltage
29
0.41
0.5
3.5
V
Maximum Body-Diode + Schottky Continuous Current
A
DYNAMIC PARAMETERS
Ciss
Coss
Crss
Rg
Input Capacitance
1267
308
118
1.3
1600
pF
pF
pF
Ω
VGS=0V, VDS=15V, f=1MHz
Output Capacitance
Reverse Transfer Capacitance
Gate resistance
VGS=0V, VDS=0V, f=1MHz
2.0
30
SWITCHING PARAMETERS
Qg(10V) Total Gate Charge
21
10.4
3
nC
nC
nC
nC
ns
Qg(4.5V) Total Gate Charge
V
GS=10V, VDS=15V, ID=8.8A
Qgs
Qgd
tD(on)
tr
Gate Source Charge
Gate Drain Charge
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
Turn-Off Fall Time
3.6
5.2
VGS=10V, VDS=15V, RL=1.7Ω,
RGEN=3Ω
3.8
ns
tD(off)
tf
21.2
4.4
ns
ns
trr
IF=8.8A, dI/dt=300A/µs
IF=8.8A, dI/dt=300A/µs
11.2
10.5
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
15
ns
Qrr
nC
A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The value
in any given application depends on the user's specific board design.
B. The power dissipation PD is based on TJ(MAX)=150°C, using ≤ 10s junction-to-ambient thermal resistance.
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep
initialTJ=25°C.
D. The RθJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-ambient thermal impedence which is measured with the device mounted on 1in2 FR-4 board with 2oz.
Copper, assuming a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating.
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Rev 3: Mar. 2011
www.aosmd.com
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