AO4924
FET1 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
2500
2000
1500
1000
500
10
8
Ciss
VDS=15V
ID=9A
6
4
Crss
2
Coss
0
0
0
5
10
15
20
25
0
5
10
15
DS (Volts)
20
25
30
Qg (nC)
V
Figure 7: Gate-Charge Characteristics
Figure 8: Capacitance Characteristics
DYNAMIC PARAMETERS
100.00
50
40
30
20
10
0
10µs
100µ
TJ(Max)=175°C
TC=25°C
RDS(ON)
limited
10.00
1.00
0.10
0.01
1ms
1s
10s
DC
TJ(Max)=150°C
TA=25°C
0.01
0.1
1
10
100
0.0001 0.001
0.01
0.1
1
10
100
VDS (Volts)
Pulse Width (s)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note E)
Figure 10: Single Pulse Power Rating Junction-to-
Ambient (Note E)
10
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
1
0.1
PD
D=Ton/T
0.01
TJ,PK=TA+PDM.ZθJA.RθJA
θJA=90°C/W
Ton
Single Pulse
T
R
0.001
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note E)
Alpha & Omega Semiconductor, Ltd.
AOS [ ALPHA & OMEGA SEMICONDUCTORS ]
