AO4924
FET1 Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min
Typ
Max
Units
STATIC PARAMETERS
ID=1mA, VGS=0V
VDS=24V, VGS=0V
BVDSS
Drain-Source Breakdown Voltage
30
V
0.01
5
0.1
10
IDSS
Zero Gate Voltage Drain Current
mA
TJ=125°C
TJ=125°C
VDS=0V, VGS= ±12V
VDS=VGS ID=250µA
VGS=4.5V, VDS=5V
IGSS
Gate-Body leakage current
Gate Threshold Voltage
On state drain current
0.1
2.4
µA
V
VGS(th)
ID(ON)
1.5
40
1.85
A
V
GS=10V, ID=9A
13
20.0
15.7
64
15.8
25.0
19.5
mΩ
RDS(ON)
Static Drain-Source On-Resistance
V
GS=4.5V, ID=7A
mΩ
S
VDS=5V, ID=9A
IS=1A,VGS=0V
gFS
VSD
IS
Forward Transconductance
Diode Forward Voltage
0.4
0.6
4.5
V
Maximum Body-Diode + Schottky Continuous Current
A
DYNAMIC PARAMETERS
Ciss
Coss
Crss
Rg
Input Capacitance
1450
224
92
1885
pF
pF
pF
Ω
VGS=0V, VDS=15V, f=1MHz
GS=0V, VDS=0V, f=1MHz
Output Capacitance
Reverse Transfer Capacitance
Gate resistance
V
1.6
3
SWITCHING PARAMETERS
Qg(10V) Total Gate Charge
Qg(4.5V) Total Gate Charge
24.0
12.0
3.9
4.2
5.5
4.7
24.0
4.0
10
31
nC
nC
nC
ns
ns
ns
ns
VGS=10V, VDS=15V, ID=9A
Qgs
Qgd
tD(on)
tr
Gate Source Charge
Gate Drain Charge
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
Turn-Off Fall Time
V
GS=10V, VDS=15V, RL=1.7Ω,
RGEN=3Ω
tD(off)
tf
trr
IF=9A, dI/dt=300A/µs
IF=9A, dI/dt=300A/µs
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
13
ns
Qrr
6.8
nC
A: The value of RθJA is measured with the device in a still air environment with T A =25°C. The power dissipation P DSM and current rating IDSM
are based on T(J(MAX)=150°C, using t ≤ 10s junction-to-ambient thermal resistance.
B: Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C.
C. The R θJA is the sum of the thermal impedence from junction to lead R θJL and lead to ambient.
D. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The SOA
curve provides a single pulse rating.
Rev2: May 2011
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Alpha & Omega Semiconductor, Ltd.
AOS [ ALPHA & OMEGA SEMICONDUCTORS ]
