AO4622
P-Channel Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min
Typ
Max Units
STATIC PARAMETERS
BVDSS
Drain-Source Breakdown Voltage
ID=-250µA, VGS=0V
-20
V
VDS=-16V, VGS=0V
-1
IDSS
Zero Gate Voltage Drain Current
µA
-5
TJ=55°C
IGSS
Gate-Body leakage current
Gate Threshold Voltage
On state drain current
VDS=0V, VGS=±12V
±100
-0.5
nA
V
VGS(th)
ID(ON)
V
V
DS=VGS ID=-250µA
-1.3
-25
-0.9
GS=-4.5V, VDS=-5V
A
VGS=-4.5V, ID=-5A
44
59
53
71
87
mΩ
mΩ
RDS(ON)
Static Drain-Source On-Resistance
TJ=125°C
VGS=-2.5V, ID=-4.2A
67
gFS
VSD
IS
Forward Transconductance
Diode Forward Voltage
V
DS=-5V, ID=-5A
13
S
V
A
IS=-1A,VGS=0V
-0.76
-1
Maximum Body-Diode Continuous Current
-2.5
DYNAMIC PARAMETERS
Ciss
Coss
Crss
Rg
Input Capacitance
800
131
103
6.7
960
10
pF
pF
pF
Ω
V
GS=0V, VDS=-10V, f=1MHz
Output Capacitance
Reverse Transfer Capacitance
Gate resistance
V
GS=0V, VDS=0V, f=1MHz
SWITCHING PARAMETERS
Qg(10V)
Qg(4.5V)
Qgs
Total Gate Charge (10V)
Total Gate Charge (4.5V)
Gate Source Charge
Gate Drain Charge
15.5
7.4
1.3
2.9
4.4
7.6
44
nC
nC
nC
nC
ns
V
GS=-4.5V, VDS=-10V, ID=-4.5A
Qgd
tD(on)
tr
tD(off)
tf
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
Turn-Off Fall Time
VGS=-4.5V, VDS=-10V, RL=2Ω,
ns
RGEN=3Ω
ns
13.5
20
ns
trr
IF=-5A, dI/dt=100A/µs
IF=-5A, dI/dt=100A/µs
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
ns
Qrr
9
nC
AA:: TThhee vvaalluuee ooff RR θJA iiss mmeeaassuurreedd wwiitthh tthhee ddeevviiccee mmoouunntteedd oonn 11iinn 2 FFRR--44 bbooaarrdd wwiitthh 22oozz.. CCooppppeerr,, iinn aa ssttiillll aaiirr eennvviirroonnmmeenntt wwiitthh TT A ==2255°°CC.. The
value in any given application depends on the user's specific board design.
The value in any a given application depends on the user's specific board design. The current rating is based on the t ≤ 10s thermal
B: Repetitive rating, pulse width limited by junction temperature.
resistance rating.
C. The R is the sum of the thermal impedence from junction to lead R θJL and lead to ambient. RθJL and RθJC are equivalent terms referring to
B: Repetitive rating, pulse wid limited by junction tempera ure.
θJA
thermal resistance from junction to drain lead.
C. The R θJA is the sum of the thermal impedence from junction to lead R θJL and lead to ambient.
D. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max.
D. The static characteristics in Figures 1 to 6,12,14 are obtained using 80 µs pulses, duty cycle 0.5% max.
2
E. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T =25°C. The SOA
E. These tests are performed with the device mounted on 1 in FR-4 board with 2oz. Copper, in a still air environment with T AA=25°C. The
curve provides a single pulse rating.
SOA curve provides a single pulse rating.
F. The current rating is based on the t ≤ 10s thermal resistance rating.
Rev1: Nov. 2006
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
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