AO4622
N-Channel Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min
Typ
Max Units
STATIC PARAMETERS
BVDSS
Drain-Source Breakdown Voltage
ID=250µA, VGS=0V
20
V
VDS=16V, VGS=0V
1
IDSS
Zero Gate Voltage Drain Current
uA
5
TJ=55°C
IGSS
Gate-Body leakage current
Gate Threshold Voltage
On state drain current
V
DS=0V, VGS=±16V
100
2
nA
V
VGS(th)
ID(ON)
VDS=VGS ID=250µA
VGS=4.5V, VDS=5V
VGS=10V, ID=7.3A
0.6
35
1.25
A
19
28
24
67
17
0.7
23
33.6
30
mΩ
TJ=125°C
RDS(ON)
Static Drain-Source On-Resistance
mΩ
mΩ
V
GS=4.5V, ID=6.4A
VGS=2.5V, ID=4.5A
DS=5V, ID=7.3A
IS=1A
84
gFS
VSD
IS
Forward Transconductance
Diode Forward Voltage
V
S
V
A
1
3
Maximum Body-Diode Continuous Current
DYNAMIC PARAMETERS
Ciss
Coss
Crss
Rg
Input Capacitance
900
162
105
1.8
1100
2.7
pF
pF
pF
Ω
V
GS=0V, VDS=10V, f=1MHz
Output Capacitance
Reverse Transfer Capacitance
Gate resistance
VGS=0V, VDS=0V, f=1MHz
SWITCHING PARAMETERS
Qg(10V)
Total Gate Charge
Total Gate Charge
Gate Source Charge
Gate Drain Charge
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
Turn-Off Fall Time
15
7.2
1.8
2.8
4.5
9.2
18.7
3.3
18
18
9
nC
nC
nC
nC
ns
Qg(4.5V)
Qgs
Qgd
tD(on)
tr
V
GS=10V, VDS=10V, ID=6.5A
VGS=10V, VDS=10V, RL=1.4Ω,
GEN=3Ω
ns
R
tD(off)
tf
ns
ns
trr
IF=7.3A, dI/dt=100A/µs
IF=7.3A, dI/dt=100A/µs
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
ns
Qrr
9.5
nC
A: The value of R θJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The
value in any given application depends on the user's specific board design.
B: Repetitive rating, pulse width limited by junction temperature.
C. The R θJA is the sum of the thermal impedence from junction to lead R θJL and lead to ambient. RθJL and RθJC are equivalent terms referring to
thermal resistance from junction to drain lead.
D. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The SOA
curve provides a single pulse rating.
F. The current rating is based on the t ≤ 10s thermal resistance rating.
Rev1:Nov. 2006
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
AOS [ ALPHA & OMEGA SEMICONDUCTORS ]
