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AWT6222RM28P9 参数 Datasheet PDF下载

AWT6222RM28P9图片预览
型号: AWT6222RM28P9
PDF下载: 下载PDF文件 查看货源
内容描述: HELP3TM三频美国Cellular /日本蜂窝/ IMT UMTS / WCDMA线性功率放大器模块 [HELP3TM Tri-band US Cellular/Japan Cellular/IMT UMTS/WCDMA Linear Power Amplifier Module]
分类和应用: 放大器射频微波功率放大器蜂窝
文件页数/大小: 8 页 / 388 K
品牌: ANADIGICS [ ANADIGICS, INC ]
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AWT6222  
APPLICATION INFORMATION  
The Bias Control table lists the recommended modes  
of operation for various applications. VMODE2 is not  
necessary for this PA.  
To ensure proper performance, refer to all related  
Application Notes on the ANADIGICS web site:  
http://www.anadigics.com  
Two operating modes are available to optimize current  
consumption. High Bias/High Power operating mode  
is for POUT levels > 16 dBm. At around 16 dBm output  
power, the PAshould be “Mode Switched” to Low power  
mode for lowest quiescent current consumption.  
Shutdown Mode  
The power amplifier may be placed in a shutdown  
mode by applying logic low levels (see Operating  
Ranges table) to the VENABLE and VMODE1 pins.  
Bias Modes  
The power amplifier may be placed in either a Low Bias  
mode or a High Bias mode by applying the appropriate  
logic level (see Operating Ranges table) to VMODE1.  
Table 6: Bias Control  
P
OUT  
BIAS  
MODE  
APPLICATION  
V
ENABLE  
V
MODE1  
V
CC  
V
BATT  
LEVELS  
< +16 dBm  
> +16 dBm  
< +7 dBm  
-
UMTS - low power  
UMTS - high power  
OPTIONAL - low power  
Shutdown  
Low  
High  
+2.4 V +2.4 V  
+2.4 V 0 V  
+2.4 V +2.4 V  
0 V 0 V  
3.2 - 4.2 V  
3.2 - 4.2 V  
1.5 - 3.2 V  
3.2 - 4.2 V  
> 3.2 V  
> 3.2 V  
> 3.2 V  
> 3.2 V  
Low  
Shutdown  
GND at slug (pad)  
V
EN_CELL  
1
14  
13  
12  
11  
10  
9
GND  
0.01 F  
Bias Control  
(1)  
RFIN_CELL  
(3)  
(3)  
68 pF  
TRL1  
2
TRL2  
RFOUT_CELL  
VMODE  
VCC  
3
1000 pF  
(4)  
V
BATT  
TRL5  
4
(2)  
68 pF  
2.2 F  
2.2 F  
5
GND  
GND  
N/C  
(1)  
(3)  
RFIN_IMT  
TRL3  
6
7
Bias Control  
(3)  
68 pF  
TRL4  
RFOUT_IMT  
VEN_IMT  
8
0.01 F  
GND  
Note:  
(1) Add blocking cap if DC voltage is present on input pin.  
(2) 68 pF cap should be placed as close as possible to Pin 4.  
(3) TRL should be short and of 50 characteristic impedance.  
(4) TRL 5 should be as long as possible (minimum of 0.1 at 800 MHz) and capable of handling 750 mA current.  
Optional 4.7 nH Inductor may be substituted.  
Figure 3: Application Circuit  
Data Sheet - Rev 2.1  
11/2008  
6