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AS4LC1M16S0-10TC 参数 Datasheet PDF下载

AS4LC1M16S0-10TC图片预览
型号: AS4LC1M16S0-10TC
PDF下载: 下载PDF文件 查看货源
内容描述: 3.3V 2M × 8 / 1M × 16的CMOS同步DRAM [3.3V 2M × 8/1M × 16 CMOS synchronous DRAM]
分类和应用: 存储内存集成电路光电二极管动态存储器时钟
文件页数/大小: 29 页 / 720 K
品牌: ALSC [ ALLIANCE SEMICONDUCTOR CORPORATION ]
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AS4LC2M8S1  
AS4LC1M16S1  
®
Recommended operating conditions  
Parameter  
Symbol  
VCC,VCCQ  
GND  
VIH  
Min  
3.0  
0.0  
2.0  
–0.3†  
2.4  
Nominal  
Max  
3.6  
Unit  
V
Notes  
3.3  
0.0  
Supply voltage  
Input voltage  
0.0  
V
VCC + 0.3  
0.8  
V
8
8
VIL  
V
VOH  
V
Output voltage‡  
VOL  
0.4  
V
Ambient operating temperature  
TA  
0
70  
°C  
V
Min = –1.5V for pulse widths less than 5 ns.  
IL  
I
= –2mA, and I = 2mA.  
OH  
OL  
Recommended operating conditions apply throughout this document unless otherwise specified.  
Absolute maximum ratings  
Parameter  
Symbol  
VIN,VOUT  
VCC,VCCQ  
TSTG  
Min  
–1.0  
–1.0  
–55  
Max  
Unit  
V
Notes  
Input voltage  
+4.6  
+4.6  
+150  
1
Power supply voltage  
V
Storage temperature (plastic)  
Power dissipation  
°C  
W
PD  
Short circuit output current  
IOUT  
50  
mA  
Note: Stresses greater than those listed under Absolute Maximum Ratings may cause permanent damage to the device. This is a stress rating only and functional  
operation of the device at these or any other conditions outside those indicated in the operational sections of this specification is not implied. Exposure to  
absolute maximum rating conditions for extended periods may affect reliability.  
5/21/01; v.1.1  
Alliance Semiconductor  
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