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ALD212908APAL 参数 Datasheet PDF下载

ALD212908APAL图片预览
型号: ALD212908APAL
PDF下载: 下载PDF文件 查看货源
内容描述: [PRECISION N-CHANNEL EPAD MOSFET ARRAY DUAL HIGH DRIVE MATCHED PAIR]
分类和应用:
文件页数/大小: 12 页 / 111 K
品牌: ALD [ ADVANCED LINEAR DEVICES ]
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TYPICAL PERFORMANCE CHARACTERISTICS (cont.)  
HIGH LEVEL OUTPUT CONDUCTANCE  
vs. GATE THRESHOLD VOLTAGE  
LOW LEVEL OUTPUT CONDUCTANCE  
vs. AMBIENT TEMPERATURE  
1000  
800  
2.75  
2.50  
T
A
= + 25°C  
V
GS  
V
DS  
= V + 0.5V  
GS(th)  
= + 3.0V  
600  
400  
2.25  
2.00  
V
V
= V + 3.0V  
GS(th)  
= + 3.0V  
GS  
DS  
1.75  
1.50  
200  
0
-4.0 -3.0  
-2.0  
-1.0  
0.0  
+1.0  
+2.0 +3.0  
(V)  
-50  
-25  
+100 +125  
0
+25  
+50  
+75  
AMBIENT TEMPERATURE - T (°C)  
GATE THRESHOLD VOLTAGE - V  
GS(th)  
A
LOW LEVEL OUTPUT CONDUCTANCE  
vs. GATE THRESHOLD VOLTAGE  
HIGH LEVEL OUTPUT CONDUCTANCE  
vs. AMBIENT TEMPERATURE  
1000  
800  
600  
400  
3.50  
3.25  
T
A
= + 25°C  
V
GS  
V
DS  
= V + 3.0V  
GS(th)  
= + 3.0V  
3.00  
2.75  
2.50  
2.25  
2.00  
V
GS  
V
DS  
= V + 0.5V  
GS(th)  
= + 3.0V  
200  
0
-4.0 -3.0  
-2.0 -1.0  
0
+1.0  
+2.0 +3.0  
(V)  
-50  
-25  
0
+25  
+50  
+75  
+100 +125  
GATE THRESHOLD VOLTAGE - V  
AMBIENT TEMPERATURE - T (°C)  
GS(th)  
A
TRANSCONDUCTANCE vs.  
AMBIENT TEMPERATURE  
TRANSCONDUCTANCE vs.  
GATE THRESHOLD VOLTAGE  
100  
80  
80  
60  
40  
20  
0
V
GS  
V
DS  
= V  
= 3.0V  
+ 3.0V  
GS(th)  
T
A
= +25°C  
V
V
= V + 3.0V  
GS(th)  
= + 3.0V  
GS  
DS  
60  
40  
20  
0
-50  
-25  
0
+25  
+50  
+75 +100  
+125  
-4.0 -3.0  
-2.0  
-1.0  
0.0  
+1.0  
+2.0 +3.0  
AMBIENT TEMPERATURE - T (°C)  
A
GATE THRESHOLD VOLTAGE - V  
GS(th)  
(V)  
ALD212908A/ALD212908  
Advanced Linear Devices  
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