ABSOLUTE MAXIMUM RATINGS
Drain-Source voltage, V
10.6V
10.6V
80mA
DS
Gate-Source voltage, V
Operating Current
Power dissipation
GS
500mW
Operating temperature range SAL, PAL
Storage temperature range
Lead temperature, 10 seconds
0°C to +70°C
-65°C to +150°C
+260°C
CAUTION: ESD Sensitive Device. Use static control procedures in ESD controlled environment.
OPERATING ELECTRICAL CHARACTERISTICS
+
-
V = +5V V = GND T = 25°C unless otherwise specified
A
ALD212908A
ALD212908
Parameter
Symbol
Min
Typ
0.80
1
Max
0.82
2
Min
Typ
0.80
2
Max
0.82
10
Unit
V
Test Conditions
=20µA, V = 0.1V
Gate Threshold Voltage
Offset Voltage
V
0.78
0.78
I
GS(th)
OS
DS
DS
- V
V
mV
V
V
GS(th)M1
= V
GS(th)M2
Offset Voltage Tempco
GateThreshold Voltage Tempco
TC
TC
5
5
µV/°C
mV/°C
VOS
DS1
DS2
-1.7
0.0
+0.6
-1.7
0.0
+1.6
I
I
I
= 20µA, V
= 0.1V
VGS(th)
D
D
D
DS
= 760µA, V
= 0.1V
= 0.1V
DS
= 1.5 mA, V
DS
79
85
79
85
mA
V
V
= +3.8V, V
= +3V
GS
GS
DS
DS
On Drain Current
I
DS(ON)
µA
= +0.9V, V
= +0.1V
Forward Transconductance
G
38
38
mmho
V
V
= +3.8V
= +3.0V
FS
GS
DS
Transconductance Mismatch
Output Conductance
∆G
1.8
2.3
1.8
2.3
%
FS
G
mmho
V
V
= +3.8V
= +3.0V
OS
GS
DS
Drain Source On Resistance
Drain Source On Resistance
R
R
14
14
Ω
V
V
= +5.8V
= +0.1V
DS(ON)
DS(ON)
GS
DS
5
1.18
5
1.18
KΩ
V
V
= +0.8V, V
= +0.9V, V
= +0.1V
= +0.1V
GS
GS
DS
DS
Drain Source On Resistance
Tolerance
∆R
1.8
0.6
1.8
0.6
%
V
V
= +5.8V
= +0.1V
DS(ON)
GS
DS
Drain Source On Resistance
Mismatch
∆R
BV
I
%
V
DS(ON)
-
Drain Source Breakdown
Voltage
10
10
V = V
= -0.2V
GS
= 10µA
DSX
I
DS
Drain Source Leakage Current1
10
5
400
4
10
5
400
4
pA
nA
V
= -0.2V, V
= +5V
DS(OFF)
GS
DS
-
V = -5V
T
A
= 125°C
Gate Leakage Current1
I
200
1
200
1
pA
nA
V
= +5V, V
= 125°C
= 0V
DS
GSS
GS
T
A
Input Capacitance
C
C
30
2
30
2
pF
pF
ISS
Transfer Reverse Capacitance
RSS
+
+
Turn-on Delay Time
Turn-off Delay Time
t
t
10
10
10
10
ns
ns
V
V
= 5V, R = 5KΩ
L
on
= 5V, R = 5KΩ
off
L
Crosstalk
60
60
dB
f = 100KHz
1
Notes:
Consists of junction leakage currents
ALD212908A/ALD212908
Advanced Linear Devices
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