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ALD212908APAL 参数 Datasheet PDF下载

ALD212908APAL图片预览
型号: ALD212908APAL
PDF下载: 下载PDF文件 查看货源
内容描述: [PRECISION N-CHANNEL EPAD MOSFET ARRAY DUAL HIGH DRIVE MATCHED PAIR]
分类和应用:
文件页数/大小: 12 页 / 111 K
品牌: ALD [ ADVANCED LINEAR DEVICES ]
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ABSOLUTE MAXIMUM RATINGS  
Drain-Source voltage, V  
10.6V  
10.6V  
80mA  
DS  
Gate-Source voltage, V  
Operating Current  
Power dissipation  
GS  
500mW  
Operating temperature range SAL, PAL  
Storage temperature range  
Lead temperature, 10 seconds  
0°C to +70°C  
-65°C to +150°C  
+260°C  
CAUTION: ESD Sensitive Device. Use static control procedures in ESD controlled environment.  
OPERATING ELECTRICAL CHARACTERISTICS  
+
-
V = +5V V = GND T = 25°C unless otherwise specified  
A
ALD212908A  
ALD212908  
Parameter  
Symbol  
Min  
Typ  
0.80  
1
Max  
0.82  
2
Min  
Typ  
0.80  
2
Max  
0.82  
10  
Unit  
V
Test Conditions  
=20µA, V = 0.1V  
Gate Threshold Voltage  
Offset Voltage  
V
0.78  
0.78  
I
GS(th)  
OS  
DS  
DS  
- V  
V
mV  
V
V
GS(th)M1  
= V  
GS(th)M2  
Offset Voltage Tempco  
GateThreshold Voltage Tempco  
TC  
TC  
5
5
µV/°C  
mV/°C  
VOS  
DS1  
DS2  
-1.7  
0.0  
+0.6  
-1.7  
0.0  
+1.6  
I
I
I
= 20µA, V  
= 0.1V  
VGS(th)  
D
D
D
DS  
= 760µA, V  
= 0.1V  
= 0.1V  
DS  
= 1.5 mA, V  
DS  
79  
85  
79  
85  
mA  
V
V
= +3.8V, V  
= +3V  
GS  
GS  
DS  
DS  
On Drain Current  
I
DS(ON)  
µA  
= +0.9V, V  
= +0.1V  
Forward Transconductance  
G
38  
38  
mmho  
V
V
= +3.8V  
= +3.0V  
FS  
GS  
DS  
Transconductance Mismatch  
Output Conductance  
G  
1.8  
2.3  
1.8  
2.3  
%
FS  
G
mmho  
V
V
= +3.8V  
= +3.0V  
OS  
GS  
DS  
Drain Source On Resistance  
Drain Source On Resistance  
R
R
14  
14  
V
V
= +5.8V  
= +0.1V  
DS(ON)  
DS(ON)  
GS  
DS  
5
1.18  
5
1.18  
KΩ  
V
V
= +0.8V, V  
= +0.9V, V  
= +0.1V  
= +0.1V  
GS  
GS  
DS  
DS  
Drain Source On Resistance  
Tolerance  
R  
1.8  
0.6  
1.8  
0.6  
%
V
V
= +5.8V  
= +0.1V  
DS(ON)  
GS  
DS  
Drain Source On Resistance  
Mismatch  
R  
BV  
I
%
V
DS(ON)  
-
Drain Source Breakdown  
Voltage  
10  
10  
V = V  
= -0.2V  
GS  
= 10µA  
DSX  
I
DS  
Drain Source Leakage Current1  
10  
5
400  
4
10  
5
400  
4
pA  
nA  
V
= -0.2V, V  
= +5V  
DS(OFF)  
GS  
DS  
-
V = -5V  
T
A
= 125°C  
Gate Leakage Current1  
I
200  
1
200  
1
pA  
nA  
V
= +5V, V  
= 125°C  
= 0V  
DS  
GSS  
GS  
T
A
Input Capacitance  
C
C
30  
2
30  
2
pF  
pF  
ISS  
Transfer Reverse Capacitance  
RSS  
+
+
Turn-on Delay Time  
Turn-off Delay Time  
t
t
10  
10  
10  
10  
ns  
ns  
V
V
= 5V, R = 5KΩ  
L
on  
= 5V, R = 5KΩ  
off  
L
Crosstalk  
60  
60  
dB  
f = 100KHz  
1
Notes:  
Consists of junction leakage currents  
ALD212908A/ALD212908  
Advanced Linear Devices  
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