ABSOLUTE MAXIMUM RATINGS
Drain-Source voltage, V
Gate-Source voltage, V
Power dissipation
10.6V
10.6V
500 mW
DS
GS
Operating temperature range SCL, PCL, SAL, PAL package
Storage temperature range
Lead temperature, 10 seconds
0°C to +70°C
-65°C to +150°C
+260°C
CAUTION: ESD Sensitive Device. Use static control procedures in ESD controlled environment.
OPERATING ELECTRICAL CHARACTERISTICS
+
-
V = +5V V = GND T = 25°C unless otherwise specified
A
ALD110808A/ALD110908A
ALD110808/ALD110908
Parameter
Symbol
GS(th)
OS
Min
0.78
Typ
Max
Min
Typ
0.80
Max
Unit
Test Conditions
I =1µA, V = 0.1V
DS
Gate Threshold Voltage
V
V
0.80
0.82
0.78
0.82
V
DS
Offset Voltage
1
2
3
10
mV
V
-V
GS(th)1 GS(th)2
Offset Voltage Tempco
TC
TC
5
5
µV/°C
mV/°C
V
= V
DS1
VOS
DS2
= 1µA, V = 0.1V
DS
GateThreshold Voltage Tempco
-1.7
0.0
+1.6
-1.7
0.0
+1.6
I
D
I
D
I
D
VGS(th)
= 20µA, V
= 40µA, V
= 0.1V
= 0.1V
DS
DS
On Drain Current
I
12.0
3.0
12.0
3.0
mA
V
V
= +10.3V, V
= +5V
DS (ON)
GS
GS
DS
= +5V
= +4.8V, V
DS
Forward Transconductance
G
1.4
1.4
mmho
V
V
= +4.8V
= +9.8V
FS
GS
DS
Transconductance Mismatch
Output Conductance
∆G
1.8
68
1.8
68
%
FS
G
µmho
V
V
= +4.8V
= +9.8V
OS
GS
DS
Drain Source On Resistance
R
500
0.5
500
0.5
Ω
V
V
= +0.1V
= +4.8V
DS (ON)
DS
GS
Drain Source On Resistance
Mismatch
∆R
BV
I
%
V
DS (ON)
Drain Source Breakdown
Voltage
10
10
I
= 1.0µA
DS
DSX
-
V = V
= -1.0V
GS
Drain Source Leakage Current1
10
3
400
4
10
3
400
4
pA
nA
V
= -0.2V, V =+5V
DS
DS (OFF)
GS
-
V = -5V
T
A
= 125°C
Gate Leakage Current1
I
200
1
200
1
pA
nA
V
= 0V V
=125°C
= +5V
GS
GSS
DS
T
A
Input Capacitance
C
C
2.5
0.1
10
2.5
0.1
10
pF
pF
ns
ISS
Transfer Reverse Capacitance
Turn-on Delay Time
RSS
+
+
t
on
V
V
= 5V R = 5KΩ
L
Turn-off Delay Time
Crosstalk
t
off
10
60
10
60
ns
= 5V R = 5KΩ
L
dB
f = 100KHz
1
Notes:
Consists of junction leakage currents
ALD110808/ALD110808A/ALD110908/ALD110908A
Advanced Linear Devices
2 of 11
ALD [ ADVANCED LINEAR DEVICES ]
