TYPICAL PERFORMANCE CHARACTERISTICS (cont.)
DRAIN - GATE DIODE CONNECTED VOLTAGE
TEMPCO vs. DRAIN SOURCE ON CURRENT
TRANSFER CHARACTERISTICS
1.6
1.2
0.8
0.4
0.0
5
T
DS
= 25°C
V
= -3.5V
V
A
GS(TH)
-55°C ≤ T ≤ +125°C
V
= +10V
A
= -1.3V
2.5
GS(TH)
V
= -0.4V
GS(TH)
V
= 0.0V
GS(TH)
0
-2.5
-5
V
= +0.2V
GS(TH)
V
= +1.4V
GS(TH)
V
= +0.8V
GS(TH)
1
10
100
1000
-4
-2
0
2
4
6
8
10
GATE-SOURCE VOLTAGE (V)
DRAIN SOURCE ON CURRENT (µA)
ZERO TEMPERETURE COEFFICIENT CHARACTERISTIC
SUBTHRESHOLD CHARACTERISTICS
2.5
0.6
V
=-3.5V
GS(TH)
2.0
1.5
0.5
0.3
V
=-1.3V, -0.4V, 0.0V, +0.2V, +0.8V, +1.4V
GS(TH)
1.0
0.5
0.0
25°C
V
= 0.4V
GS(th)
0.2
0.0
55°C
V
= 0.2V
GS(th)
-0.5
10000
100000
1
1000
100
10
0.1
0.1
0.2
0.5
2.0
5.0
1.0
DRAIN-SOURCE ON VOLTAGE (V)
DRAIN -SOURCE CURRENT (nA)
THRESHOLD VOLTAGE vs.
AMBIENT TEMPERATURE
TRANCONDUCTANCE vs. DRAIN-SOURCE
ON CURRENT
1.2
0.9
4.0
T
DS
= 25°C
A
V
= +0.1V
I
= 1.0
D µA
DS
V
= +10V
3.0
2.0
1.0
0.6
0.3
V = 1.4V
t
V = 0.8V
t
V = 0.0V
t
V = 0.2V
t
V = 0.4V
t
0.0
0
2
6
8
10
0
4
-50
-25
0
25
50
75
100
125
AMBIENT TEMPERATURE (°C)
DRAIN -SOURCE ON CURRENT(mA)
NORMALIZED SUBTHRESHOLD
CHARACTERISTICS RELATIVE
GATE THRESHOLD VOLTAGE
THRESHOLD VOLTAGES
vs. AMBIENT TEMPERATURES
2.0
1.0
0.3
0.2
0.1
I
V
= +1µA
DS
V
= 0.1V
D
= +0.1V
DS
V
= 0.0V
GS(th)
0.0
V
= -0.4V
= -1.3V
GS(th)
0
-0.1
-0.2
-1.0
-2.0
-3.0
V
GS(th)
25°C
55°C
-0.3
-0.4
V
= -3.5V
GS(th)
-4.0
-25
25
75
125
10000
10
1
0.1
1000
100
AMBIENT TEMPERATURE (OC)
DRAIN-SOURCE CURRENT (nA)
ALD110808/ALD110808A/ALD110908/ALD110908A
Advanced Linear Devices
7 of 11
ALD [ ADVANCED LINEAR DEVICES ]
