AM2301
MOSFET
AiT Semiconductor Inc.
www.ait-ic.com
P-CHANNEL ENHANCEMENT MODE
ELECTRICAL CHARACTERISTICS
TA = 25℃, unless otherwise noted
Parameter
Symbol
Conditions
Min
Typ.
Max
Units
Static Parameters
Drain-Source Breakdown Voltage
Gate Threshold Voltage
V(BR)DSS VGS=0V,ID=-250μA
-20
-0.5
-
-
-
-
-
V
V
VGS(th)
IGSS
VDS=VGS,ID=-250μA
VDS=0V,VGS=±12V
VDS=-20V,VGS=0V
TJ=25°C
-1.2
±100
Gate Leakage Current
nA
-
-
-
-
-1
-5
Zero Gate Voltage Drain Current
IDSS
μA
VDS=-20V,VGS=0V
TJ=55°C
VGS=-4.5V,ID=-3.0A
VGS=-2.5V,ID=-2.0A
VDS=-5V,ID=-3.0A
-
-
-
80
105
7.5
98
130
-
Drain-source On-ResistanceNOTE2
RDS(ON)
Gfs
mΩ
Forward Transconductance
Source-Drain Doide
S
Diode Forward Voltage
Continuous Source Current NOTE1,3
Dynamic Parameters
VSD
IS
IS=-1.0A,VGS=0V
-
-
-0.7
-
-1.2
-6
V
A
Qg
Qgs
Qgd
Ciss
Coss
Total Gate Charge
-
-
-
-
-
9.4
1.2
3.5
521
81
-
-
-
-
-
VDS=-12V, VGS=-4.5V
Gate-Source Charge
Gate-Drain Charge
Input Capacitance
Output Capacitance
nC
pF
ID≡-3.0A
VDS=-10V, VGS=0V
f=1MHz
Reverse Transfer
Capacitance
Crss
-
56
-
td(on)
tr
td(off)
tf
-
-
-
-
7.2
16
21
9
-
-
-
-
Turn-On Time
VDD=-12V, ID=-1A
VGEN=-4.5V,
ns
RG=3.3Ω
Turn-Off Time
NOTE1: The value of R θJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment
with TA=25°C.
NOTE2: The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2%
NOTE3: The data is theoretically the same as ID and IDM, in real applications, should be limited by total power dissipation.
REV3.0
- JUN 2010 RELEASED, FEB 2018 UPDATED -
- 4 -
AITSEMI [ AiT Semiconductor ]
