AM2301
MOSFET
AiT Semiconductor Inc.
www.ait-ic.com
P-CHANNEL ENHANCEMENT MODE
ABSOLUTE MAXIMUM RATINGS
TA = 25℃, unless otherwise noted
V
DSS, Drain-Source Voltage
-20V
±12V
VGSS, Gate-Source Voltage
TA=25℃NOTE1
TA=70℃NOTE1
3.2A
ID, Continuous Drain Current , VGS = -4.5V
IDM, Pulsed Drain CurrentNOTE2
PD, Power Dissipation
2.5A
-10A
TA=25oC
TA=70oC
1.0W
0.7W
TJ, Operation Junction Temperature
TSTG, Storage Temperature Range
-55℃~150℃
-55℃~150℃
Stresses above may cause permanent damage to the device. These are stress ratings only and functional operation of the device at
these or any other conditions beyond those indicated in the Electrical Characteristics are not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
THERMAL INFORMATION
Parameter
Symbol
RθJA
Limit
125
85
Unit
°C/W
°C/W
Thermal Resistance-Junction to AmbientNOTE1 Steady-State
Thermal Resistance Junction to LeadNOTE1
Steady-State
RθJC
REV3.0
- JUN 2010 RELEASED, FEB 2018 UPDATED -
- 3 -
AITSEMI [ AiT Semiconductor ]
