AG2103
AiT Semiconductor Inc.
www.ait-ic.com
MOSFET/IGBT GATE DRIVER
HALF-BRIDGE DRIVER
ELECTRICAL CHARACTERISTICS
VBIAS (VCC, VBS) = 15V, CL = 1000pF and TA = 25°C, unless otherwise specified.
Parameter
Dynamic Electrical Characteristics
High Side Turn-On Propagation Delay
High Side Turn-Off Propagation Delay
Low Side Turn-On Propagation Delay
Low Side Turn-Off Propagation Delay
Delay Matching
Symbol
Conditions
Min
Typ.
Max
Units
tonH
toffH
tonL
toffL
MT
DT
tr
-
-
-
-
-
-
-
-
630
140
630
140
-
820
220
820
220
50
ns
Dead time
500
60
650
120
90
Turn-On Rise Time
Turn-Off Fall Time
tf
35
Static Electrical Characteristics
Logic “1”(HIN &
) Input Voltage
VIH
VIL
2.5
-
-
-
-
LIN
Logic “0” (HIN &
) Input Voltage
-
-
0.8
0.1
LIN
V
High Level Output Voltage, VBIAS - VO
Low Level Output Voltage, VO
Quiescent VCC Supply Current
Quiescent VB Supply Current
VOH
VOL
IQCC
IQBS
ILK
-
-
-
-
-
150
30
-
0.1
270
55
Leakage Current from VS(600V) to GND
Logic “1” input bias current
10
μA
IIN+
IIN-
-
-
6
-
10
1
(HIN “1” &
“0”)
LIN
Logic “0” input bias current
(HIN “0” & “1”)
LIN
VCCU
+
-
-
-
-
8.7
8
-
-
-
-
VCC Supply UVLO Threshold
V
VCCU
IO+
-
Output High Short Circuit Pulsed Current
Output Low Short Circuit Pulsed Current
300
600
mA
IO-
REV1.0
- NOV 2017 RELEASED -
- 4 -
AITSEMI [ AiT Semiconductor ]
