AG2103
AiT Semiconductor Inc.
www.ait-ic.com
MOSFET/IGBT GATE DRIVER
HALF-BRIDGE DRIVER
ABSOLUTE MAXIMUM RATINGS
VB, High Side Floating Supply
-0.3V ~ 622V
VB -22V ~ VB +0.3V
VS -0.3V ~ VB +0.3V
-0.3V ~ 22V
-0.3V ~ VCC +0.3V
-0.3V ~ VCC +0.3V
50V/ns
VS, High Side Floating Supply Return
VHO, High Side Gate Drive Output
VCC, Low Side and Main Power Supply
VLO, Low Side Gate Drive Output
VIN, Logic Input of HIN &
LIN
dVS/dt, Allowable Offset Supply Voltage Transient
ESD, HBM Model
2.5kV
ESD, Machine Model
200V
PD, Package Power Dissipation @ TA ≤25°C
RthJA, Thermal Resistance Junction to Ambient
TJ, Junction Temperature
SOP8
SOP8
0.625W
200℃/W
150℃
TS, Storage Temperature
-55℃~150℃
300℃
TL, Lead Temperature (Soldering, 10 seconds)
Stress beyond above listed “Absolute Maximum Ratings” may lead permanent damage to the device. These are stress ratings only and
operations of the device at these or any other conditions beyond those indicated in the operational sections of the specifications are not
implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability.
RECOMMENDED OPERATING CONDITIONS
Parameter
High Side Floating Supply
Symbol
VB
Min.
Max.
Units
V
VS +10
VS +20
High Side Floating Supply Return
High Side Gate Drive Output Voltage
Low Side Supply
VS
VHO
VCC
VLO
VIN
TA
-
VS
10
0
600
VB
V
V
20
V
Low Side Gate Drive Output Voltage
VCC
VCC
125
V
Logic Input Voltage(HIN &
Ambient Temperature
)
0
V
LIN
-40
℃
REV1.0
- NOV 2017 RELEASED -
- 3 -
AITSEMI [ AiT Semiconductor ]
