DC Specifications/Physical Properties
[1]
Symbol
Vfwd
Rthru
Notes:
1. Measured on wafer with T
chuck
= 25
°
C unless otherwise noted.
Parameters/Conditions
Forward Voltage @ 1 mA
RF In/Out Pad to Gnd Pad of Diode Stack
DC Through Resistance
Min.
Typ.
5.3
1
Max.
Units
V
Ω
RF Specializations
[1]
Symbol
IL
RL
P
–1dB
SHI
THI
TOI
Notes:
1. Measured on wafer with T
chuck
= 25
°
C. Numbers shown are over 0–50 GHz band unless otherwise specified.
Parameters/Conditions
Insertion Loss
Return Loss (S
11
+ S
22
)
Incident Power @ 1 dB Gain Compression
Second Harmonic Intercept
Third Harmonic Intercept
Third Order Intercept
3 GHz
13.5 GHz
3 GHz
13.5 GHz
3 GHz
13.5 GHz
3 GHz
13.5 GHz
3 GHz
13.5 GHz
3 GHz
13.5 GHz
Min.
Typ.
0.3
1.0
23
15
26
25
>100
>100
50
43
49
43
Max.
Units
dB
dBm
dBm
dBm
dBm
dBm
Notes:
GND
16
GND
15
GND
14
GND
13
GND
1
12
GND
RFIN
2
11
RFOUT
Discrete MIM chip ca-
pacitors are connected
to the shunt diode
stacks of the input lim-
iter MMIC to allow DC
offsets of the RFIN
pins.
Dual RF Input Pins (4,5)
and RF Output Pins
(20,21) enable better
matched transition to
wide 50? trace widths
typically used in PCB
implementations.
GND
3
10
GND
GND
4
TC626
9
GND
G ND
1
17
5
GND
6
GND
7
GND
8
GND
TOP
VIEW
Figure 1. TC626P Schematic
2
TC626P/rev.3.0
AGILENT [ AGILENT TECHNOLOGIES, LTD. ]
