Agilent 1GG5-8205
Packaged 13.5 GHz GaAs Diode Limiter
TC626P
Data Sheet
Features
• ESD Protection:
3000V Human Body Model
• Insertion Loss:
1.0 dB Typ.
• Port Match:
S
11
and S
22
–15 dB Typ.
• Power Handling:
P
–1dB
25 dBm Typ.
• Distortion:
SHI >100 dBm Typ.
THI +43 dBm Typ.
TOI +43 dBm Typ.
Description
The TC626P is a 13.5 GHz GaAs
integrated diode limiter that can
be used to protect sensitive RF
circuits from excess RF power,
DC transients, and ESD.
The circuit contains Planar–
Doped–Barrier (PDB) diodes
with integrated matching net-
works and is fabricated with the
MB6A integrated diode process.
The barrier height of each diode
element and the number of di-
ode elements in each “stack” are
optimized for low distortion
when P
in
<15 dBm, while limit-
ing transmitted power when P
in
>25 dBm.
Absolute Maximum Ratings
[1]
Symbol
P
cont
I
cont
V
cont
T
A
T
ch
T
max
Notes:
1. Operation in excess of any one of these conditions may result in permanent damage to this
device. T
A
= 25°C except for T
op
, T
st
, and T
max
.
2. Sixty–second maximum.
Parameters/Conditions
Continuous Input Power
Continuous DC Current
Continuous DC Voltage
Backside Temperature
Operating Channel Temperature
Maximum Assembly Temperature
[2]
Storage Temperature
Min.
Max.
33
160
7
Units
dBm
mA
V
°C
°C
°C
°C
–55
75
150
300
T
stg
–65
165
1
AGILENT [ AGILENT TECHNOLOGIES, LTD. ]
