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ATTL7583BAJ-D 参数 Datasheet PDF下载

ATTL7583BAJ-D图片预览
型号: ATTL7583BAJ-D
PDF下载: 下载PDF文件 查看货源
内容描述: 线卡接入交换机 [Line Card Access Switch]
分类和应用: 电信集成电路光电二极管
文件页数/大小: 20 页 / 470 K
品牌: AGERE [ AGERE SYSTEMS ]
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Data Sheet  
February 2001  
L7583A/B/C/D Line Card Access Switch  
Handling Precautions  
Although protection circuitry has been designed into this device, proper precautions should be taken to avoid expo-  
sure to electrostatic discharge (ESD) during handling and mounting. Lucent Technologies Microelectronics Group  
employs a human-body model (HBM) and a charged-device model (CDM) for ESD-susceptibility testing and pro-  
tection design evaluation. ESD voltage thresholds are dependent on the circuit parameters used to define the  
model. No industry-wide standard has been adopted for CDM. However, a standard HBM (resistance = 1500 ,  
capacitance = 100 pF) is widely used and therefore can be used for comparison purposes. The HBM ESD thresh-  
old presented here was obtained by using these circuit parameters.  
Table 3. HBM ESD Threshold Voltage  
Device  
Rating  
L7583  
1000 V  
Electrical Characteristics  
TA = –40 °C to +85 °C, unless otherwise specified.  
Minimum and maximum values are testing requirements. Typical values are characteristics of the device and are  
the result of engineering evaluations. Typical values are for information purposes only and are not part of the test-  
ing requirements.  
Table 4. Power Supply Specifications  
Supply  
VDD  
Min  
Typ  
Max  
Unit  
Supply  
Min  
Typ  
Max  
Unit  
4.5  
5
5.5  
V
VBAT*  
–19  
–72  
V
* VBAT is used only as a reference for internal protection circuitry. If VBAT rises above –10 V, the device will enter an all OFF state and remain in  
this state until the battery voltage drops below –15 V.  
Table 5. Test In Switches, 1 and 2  
Parameter  
Test Condition  
Measure  
Min Typ Max Unit  
OFF-state Leakage Current:  
+25 °C  
Vswitch (differential) = –320 V to Gnd  
Vswitch (differential) = –60 V to +260 V  
Vswitch (differential) = –330 V to Gnd  
Vswitch (differential) = –60 V to +270 V  
Vswitch (differential) = –310 V to Gnd  
Vswitch (differential) = –60 V to +250 V  
Iswitch  
Iswitch  
Iswitch  
1
1
1
µA  
µA  
µA  
+85 °C  
–40 °C  
ON-resistance:  
+25 °C  
Iswitch (on) = ±5 mA, ±10 mA  
Iswitch (on) = ±5 mA, ±10 mA  
Iswitch (on) = ±5 mA, ±10 mA  
VON  
VON  
VON  
45  
33  
70  
+85 °C  
–40 °C  
Isolation:  
+25 °C  
Vswitch (both poles) = ±320 V,  
Logic inputs = Gnd  
Vswitch (both poles) = ±330 V,  
Logic inputs = Gnd  
Vswitch (both poles) = ±310 V,  
Logic inputs = Gnd  
Iswitch  
Iswitch  
Iswitch  
1
1
1
µA  
µA  
µA  
+85 °C  
–40 °C  
200  
V/µs  
dV/dt Sensitivity*  
* Applied voltage is 100 Vp-p square wave at 100 Hz.  
4
Lucent Technologies Inc.