b. For device classes Q and V, the devices or test vehicle shall be subjected to radiation hardness assured tests as
specified in MIL-PRF-38535 for the RHA level being tested. For device class M, the devices shall be subjected to
radiation hardness assured tests as specified in MIL-PRF-38535, appendix A for the RHA level being tested. All device
classes must meet the postirradiation end-point electrical parameter limits as defined in table IA at
T
= +25°C ± 5°C, after exposure, to the subgroups specified in table IIA herein.
A
4.4.4.1 Total dose irradiation testing. Total dose irradiation testing shall be performed in accordance with MIL-STD-883
method 1019, condition A and as specified herein.
4.4.4.1.1 Accelerated aging test. Accelerated aging tests shall be performed on all devices requiring a RHA level greater than
5k rads(Si). The post-anneal end-point electrical parameter limits shall be as specified in table IA herein and shall be the pre-
irradiation end-point electrical parameter limit at 25°C ±5°C. Testing shall be performed at initial qualification and after any
design or process changes which may affect the RHA response of the device.
4.4.4.2 Single event phenomena (SEP). SEP testing shall be required on class V devices (see 1.6 herein). SEP testing shall
be performed on a technology process on the Standard Evaluation Circuit (SEC) or alternate SEP test vehicle as approved by
the qualifying activity at initial qualification and after any design or process changes which may affect the upset or latchup
characteristics. The recommended test conditions for SEP are as follows:
a. The package lid of the DUT is removed so as to provide an unobstructed path to the die for the ion beam.
b. The DUT is biased or exercised as appropriate to that IC being tested.
c. The temperature that SEP tests are conducted at is 25°C +/- 10°C (ambient).
d. Particle penetration range is > 20 microns (Si).
e. The flux used is between 102 and 105 ions/cm2/s.
f. The beam incidence angle(s) used are between 0° to 60° from normal.
g. Supply current and voltage(s) as well as SEU, SEL and faults are monitored and recorded in-situ.
h. For SEP test limits, see Table IB herein.
4.5 Delta measurements for device class V. Delta measurements, as specified in table IIA, shall be made and recorded
before and after the required burn-in screens and steady-state life tests to determine delta compliance. The electrical
parameters to be measured, with associated delta limits are listed in table IIB. The device manufacturer may, at his option,
either perform delta measurements or within 24 hours after burn-in perform final electrical parameter tests, subgroups 1, 7,
and 9.
4.6 Programming procedures. The programming procedures shall be as specified by the device manufacturer and shall be
made available upon request.
5. PACKAGING
5.1 Packaging requirements. The requirements for packaging shall be in accordance with MIL-PRF-38535 for device classes
Q and V or MIL-PRF-38535, appendix A for device class M.
SIZE
STANDARD
5962-92156
A
MICROCIRCUIT DRAWING
DEFENSE SUPPLY CENTER COLUMBUS
COLUMBUS, OHIO 43218-3990
REVISION LEVEL
J
SHEET
9
DSCC FORM 2234
APR 97
ACTEL [ Actel Corporation ]
