5STP 34H1601
22000
20000
18000
16000
14000
12000
10000
8000
6000
4000
2000
0
80
75
70
65
60
55
50
45
40
35
30
18
25°C
125°C
I TSM
i2dt
ò
17
16
15
14
13
12
11
10
9
8
0
0,5
1
1,5
2
2,5
3
1
10
100
t ( ms )
VT ( V )
Fig. 2 Max. on-state voltage characteristics
Fig. 3 Surge forward current vs. pulse length. Half
sine wave, single pulse, VR = 0 V
14
7
VFGM
12
6
5
4
3
2
1
0
DC = P GAVm
500µs
1ms
10
8
-40 °C
+25 °C
6
+125 °C
4
10ms
DC = P GAVm
2
VGTmin
0
0
2
4
6
8
10
I G ( A )
12
0
0,5
1
I
G ( A )
Fig. 4 Gate trigger characteristics
Fig. 5 Gate trigger characteristics
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
Doc. No. 5SYA1065-01 March 05
page 4 of 6
ABB [ THE ABB GROUP ]
