5STP 34H1601
Triggering
Maximum rated values 1)
Parameter
Symbol Conditions
min
min
typ
typ
max
Unit
Peak forward gate voltage VFGM
Peak forward gate current IFGM
Peak reverse gate voltage VRGM
12
10
10
5
V
A
V
Mean forward gate power
Characteristic values
Parameter
PG(AV)
W
Symbol Conditions
max
Unit
Gate-trigger voltage
VGT
Tvj = -40 °C
Tvj = 25 °C
Tvj = 125 °C
Tvj = -40 °C
Tvj = 25 °C
Tvj = 125 °C
4
3
V
0.25
2
Gate-trigger current
IGT
500
250
150
mA
10
Thermal
Maximum rated values 1)
Parameter
Symbol Conditions
min
typ
max
Unit
Operating junction
temperature range
Tvj
-40
125
°C
Storage temperature range Tstg
-40
125
°C
Characteristic values
Parameter
Symbol Conditions
min
typ
max
Unit
Thermal resistance junction Rth(j-c)
to case
Double-side cooled
Fm = 45...55 kN
10
K/kW
Rth(j-c)A Anode-side cooled
Fm = 45...55 kN
16
26.5
3
K/kW
K/kW
K/kW
K/kW
Rth(j-c)C Cathode-side cooled
Fm = 45...55 kN
Thermal resistance case to Rth(c-h)
heatsink
Double-side cooled
Fm = 45...55 kN
Rth(c-h)
Single-side cooled
Fm = 45...55 kN
6
Analytical function for transient thermal
impedance:
n
-t/ti
Z
(t) = R (1-e )
å
th(j-c)
th i
i=1
i
1
2
3
4
Rth i(K/kW)
6.730
0.4871
1.440
0.1468
0.650
0.0677
1.160
0.0079
ti(s)
Fig. 1 Transient thermal impedance junction-to case.
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
Doc. No. 5SYA1065-01 March 05
page 3 of 6
ABB [ THE ABB GROUP ]
