5STP 33L2800
Fig. 6 Surge on-state current vs. pulse length. Half-
Fig. 7 Surge on-state current vs. number of pulses.
sine wave.
Half-sine wave, 10 ms, 50Hz.
IG (t)
IGM
≈ 2..5 A
≥ 1.5 IGT
IGon
100 %
90 %
IGM
diG/dt ≥ 2 A/µs
tr
≤ 1 µs
tp(IGM
)
≈ 5...20µs
diG/dt
IGon
10 %
tr
t
tp (IGM
)
tp (IGon
)
Fig. 8 Recommendet gate current waveform.
Fig. 9 Max. peak gate power loss.
Fig. 10 Recovery charge vs. decay rate of on-state
Fig. 11 Peak reverse recovery current vs. decay rate
current.
of on-state current.
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
Doc. No. 5SYA1011-03 Jan. 02
page 5 of 6
ABB [ THE ABB GROUP ]
