5STP 33L2800
On-state characteristic model:
VT = A+ B⋅iT +C⋅ln(iT +1)+ D⋅ IT
Valid for iT = 400 – 11000 A
A
B
C
D
7.3117e-1
7.9000e-5
1.7903e-2
2.3140e-3
Fig. 2 On-state characteristics.
Fig. 3 On-state characteristics.
Tj=125°C, 10ms half sine
Fig. 4 On-state power dissipation vs. mean on-
Fig. 5 Max. permissible case temperature vs.
state current. Turn - on losses excluded.
mean on-state current.
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
Doc. No. 5SYA1011-03 Jan. 02
page 4 of 6
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