5STP 28L4200
Triggering
Maximum rated values 1)
Parameter
Peak forward gate voltage VFGM
Peak forward gate current IFGM
Peak reverse gate voltage VRGM
Symbol Conditions
min
min
typ
max
Unit
12
10
10
3
V
A
V
Gate power loss
PG
For DC gate current
W
Average gate power loss
Characteristic values
Parameter
PGAV
see Fig. 9
Symbol Conditions
typ
max
Unit
Gate trigger voltage
VGT
Tj = 25°C
2.6
V
Gate trigger current
Gate non-trigger voltage
Gate non-trigger current
IGT
VGD
IGD
Tj = 25°C
VD = 0.4 x VDRM, Tvjmax = 125°C
VD = 0.4 x VDRM, Tvjmax = 125°C
400
mA
V
mA
0.3
10
Thermal
Maximum rated values 1)
Parameter
Symbol Conditions
Tj
min
typ
typ
max
125
Unit
°C
Operating junction
temperature range
Storage temperature range Tstg
-40
140
°C
Characteristic values
Parameter
Symbol Conditions
min
max
Unit
Thermal resistance junction Rth(j-c)
Double side cooled
7
K/kW
to case
Rth(j-c)A Anode side cooled
Rth(j-c)C Cathode side cooled
14
14
1.5
K/kW
K/kW
K/kW
Thermal resistance case to Rth(c-h)
Double side cooled
heatsink
Rth(c-h)
Single side cooled
3
K/kW
Analytical function for transient thermal
impedance:
n
(t) = åR
Z
thJC
i
(1-e-t/τ i )
i=1
i
1
2
3
4
Ri(K/kW)
4.7
0.4787
0.853
0.0824
1.07
0.0104 0.0041
0.49
τi(s)
Fig. 1 Transient thermal impedance junction-to case.
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
Doc. No. 5SYA1009-03 Jan. 02
page 3 of 6
ABB [ THE ABB GROUP ]
