5STP 28L4200
On-state
Maximum rated values 1)
Parameter
Symbol Conditions
min
typ
max
3170
Unit
Max. average on-state
ITAVM
Half sine wave, Tc = 70°C
A
current
RMS on-state current
ITRMS
ITSM
4980
52000
A
A
Max. peak non-repetitive
tp = 10 ms, Tj = 125°C,
VD=VR = 0 V
surge current
Limiting load integral
I2t
ITSM
13520
56000
kA2s
A
Max. peak non-repetitive
tp = 8.3 ms, Tj = 125°C,
VD=VR=0 V
surge current
Limiting load integral
Characteristic values
Parameter
On-state voltage
Threshold voltage
Slope resistance
Holding current
I2t
13014
kA2s
Symbol Conditions
min
typ
max
1.45
0.97
0.158
100
60
Unit
VT
VT0
rT
IT = 3000 A, Tj= 125°C
IT = 2000 A - 6000 A, Tj= 125°C
Tj = 125°C
Tj = 25°C
Tj = 125°C
V
V
mΩ
mA
mA
mA
mA
IH
Latching current
IL
Tj = 25°C
Tj = 125°C
500
300
Switching
Maximum rated values 1)
Parameter
Symbol Conditions
min
typ
typ
max
250
Unit
Critical rate of rise of on-
di/dtcrit
Cont.
f = 50 Hz
Cont.
A/µs
A/µs
µs
state current
Tj
= 125°C, ITRM = 4000 A,
VD ≤ 0.67⋅VDRM
,
Critical rate of rise of on-
state current
di/dtcrit
1000
IFG = 2 A, tr = 0.5 µs
f = 1Hz
Circuit-commutated turn-off tq
time
Tj = 125°C, ITRM = 4000 A,
VR = 200 V, diT/dt = -5 A/µs,
600
VD ≤ 0.67⋅VDRM, dvD/dt = 20 V/µs,
Characteristic values
Parameter
Recovery charge
Symbol Conditions
min
5500
max
7500
Unit
µAs
Qrr
Tj = 125°C, ITRM = 4000 A,
VR = 200 V, diT/dt = -5 A/µs
Delay time
td
3
µs
VD = 0.4⋅VDRM, IFG = 2 A, tr = 0.5 µs
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
Doc. No. 5SYA1009-03 Jan. 02
page 2 of 6
ABB [ THE ABB GROUP ]
