5SNA 1200G330100
5
4
3
2
1
0
9
8
7
6
5
4
3
2
1
0
VCC = 1800 V
RG = 1.5 ohm
VGE = ±15 V
Tvj = 125 °C
Ls = 125 nH
VCC = 1800 V
IC = 1200 A
VGE = ±15 V
Tvj = 125 °C
Ls = 125 nH
Eon
Eon
Eoff
Eoff
Esw [J] = 462 x 10-9 x IC2 + 206 x 10-5 x IC + 0.56
0
5
10
15
0
500
1000
1500
2000
2500
RG [ohm]
IC [A]
Fig. 5
Typical switching energies per pulse
vs collector current
Fig. 6
Typical switching energies per pulse
vs gate resistor
10
10
VCC = 1800 V
IC = 1200 A
VGE = ±15 V
Tvj = 125 °C
Ls = 125 nH
td(off)
td(on)
tr
td(off)
tf
1
1
td(on)
tf
0.1
tr
VCC = 1800 V
RG = 1.5 ohm
VGE = ±15 V
Tvj = 125 °C
Ls = 125 nH
0.1
0.01
0
5
10
15
0
500
1000
1500
2000
2500
RG [ohm]
IC [A]
Fig. 7
Typical switching times
vs collector current
Fig. 8
Typical switching times
vs gate resistor
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
Doc. No. 5SYA1563-00 Apr.06
page 6 of 9
ABB [ THE ABB GROUP ]
