5SNA 1200G330100
3)
IGBT characteristic values
Parameter
Symbol Conditions
min typ max Unit
Collector (-emitter)
breakdown voltage
V(BR)CES VGE = 0 V, IC = 10 mA, Tvj = 25 °C
3300
V
4)
Tvj = 25 °C
Tvj = 125 °C
Tvj = 25 °C
Tvj = 125 °C
3.1
V
V
Collector-emitter
saturation voltage
VCE sat
IC = 1200 A, VGE = 15 V
VCE = 3300 V, VGE = 0 V
3.5 3.85 4.3
12
mA
mA
nA
V
Collector cut-off current
ICES
120
Gate leakage current
IGES
-500
5.5
500
7.5
VCE = 0 V, VGE = ±20 V, Tvj = 125 °C
Gate-emitter threshold voltage
VGE(TO)
IC = 240 mA, VCE = VGE, Tvj = 25 °C
IC = 1200 A, VCE = 1800 V,
VGE = -15 V .. 15 V
Gate charge
Qge
10.9
µC
Input capacitance
Cies
Coes
Cres
187
11.6
2.22
530
VCE = 25 V, VGE = 0 V, f = 1 MHz,
Tvj = 25 °C
nF
Output capacitance
Reverse transfer capacitance
VCC = 1800 V,
IC = 1200 A,
RG = 1.5 W,
VGE = ±15 V,
Tvj = 25 °C
Tvj = 125 °C
Tvj = 25 °C
Turn-on delay time
Rise time
td(on)
ns
ns
ns
ns
500
230
tr
Ls = 125 nH, inductive load Tvj = 125 °C
230
VCC = 1800 V,
IC = 1200 A,
RG = 1.5 W,
VGE = ±15 V,
Tvj = 25 °C
Tvj = 125 °C
Tvj = 25 °C
1200
1330
350
Turn-off delay time
Fall time
td(off)
tf
Ls = 125 nH, inductive load Tvj = 125 °C
440
VCC = 1800 V, IC = 1200 A,
VGE = ±15 V, RG = 1.5 W,
Ls = 125 nH, inductive load
Tvj = 25 °C
Tvj = 125 °C
Tvj = 25 °C
Tvj = 125 °C
1260
1730
1340
1900
Turn-on switching energy
Turn-off switching energy
Eon
Eoff
mJ
mJ
VCC = 1800 V, IC = 1200 A,
VGE = ±15 V, RG = 1.5 W,
Ls = 125 nH, inductive load
t
psc ≤ 10 μs, VGE = 15 V, Tvj = 125 °C,
Short circuit current
ISC
5100
A
VCC = 2500 V, VCEM CHIP ≤ 3300 V
Module stray inductance
Ls CE
18
0.07
0.1
nH
TC = 25 °C
TC = 125 °C
Resistance, terminal-chip
RCC’+EE’
mΩ
3)
Characteristic values according to IEC 60747 – 9
Collector-emitter saturation voltage is given at chip level
4)
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
Doc. No. 5SYA1563-00 Apr.06
page 2 of 9
ABB [ THE ABB GROUP ]
