5SNA 0400J650100
2000
1800
1600
1400
1200
1000
800
1600
1400
1200
1000
800
600
400
200
0
VCC = 3600 V
RG = 5.6 ohm
VGE = ±15 V
Tvj = 125 °C
Ls = 280 nH
Erec
VCC = 3600 V
IF = 400 A
VGE = ±15 V
Tvj = 125 °C
Ls = 280 nH
Erec
Qrr
Qrr
Irr
Irr
600
400
200
Erec [mJ] = -2.1 x 10-3 x IC2 + 3.58 x IC + 286
0
0
100 200 300 400 500 600 700 800 900
IF [A]
0
0.5
1
1.5
2
2.5
di/dt [kA/µs]
Fig. 12 Typical reverse recovery characteristics
Fig. 13 Typical reverse recovery characteristics
vs forward current
vs di/dt
800
700
1000
VCC £ 4400 V
di/dt 2500 A/µs
£
Tvj = 125 °C
800
600
400
200
0
Ls 280 nH
£
600
125 °C
25 °C
500
400
300
200
100
0
0
1
2
3
4
5
0
1000 2000 3000 4000 5000 6000 7000
VR [V]
VF [V]
Fig. 14 Typical diode forward characteristics,
Fig. 15 Safe operating area diode (SOA)
chip level
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
Doc. No. 5SYA 1592-01 Jun 07
page 8 of 9