5SNA 0400J650100
3)
IGBT characteristic values
Parameter
Symbol Conditions
min typ max Unit
Collector (-emitter)
breakdown voltage
V(BR)CES VGE = 0 V, IC = 10 mA, Tvj = 25 °C
6500
V
4)
Tvj = 25 °C
Tvj = 125 °C
Tvj = 25 °C
Tvj = 125 °C
4.2
5.4
4.8
5.9
8
V
V
Collector-emitter
saturation voltage
VCE sat
IC = 400 A, VGE = 15 V
VCE = 6500 V, VGE = 0 V
mA
mA
nA
V
Collector cut-off current
ICES
35
80
500
8
Gate leakage current
IGES
-500
6
VCE = 0 V, VGE = ±20 V, Tvj = 125 °C
Gate-emitter threshold voltage
VGE(TO)
IC = 160 mA, VCE = VGE, Tvj = 25 °C
7.4
5.3
IC = 400 A, VCE = 3600 V,
VGE = -15 V .. 15 V
Gate charge
Qge
µC
Input capacitance
Cies
Coes
Cres
95.3
4.41
0.85
700
VCE = 25 V, VGE = 0 V, f = 1 MHz,
Tvj = 25 °C
nF
Output capacitance
Reverse transfer capacitance
VCC = 3600 V,
IC = 400 A,
RG = 5.6 W,
VGE = ±15 V,
Tvj = 25 °C
Tvj = 125 °C
Tvj = 25 °C
Turn-on delay time
Rise time
td(on)
ns
ns
ns
ns
630
250
tr
Ls = 280 nH, inductive load Tvj = 125 °C
220
VCC = 3600 V,
IC = 400 A,
RG = 5.6 W,
VGE = ±15 V,
Tvj = 25 °C
Tvj = 125 °C
Tvj = 25 °C
1410
1700
650
Turn-off delay time
Fall time
td(off)
tf
Ls = 280 nH, inductive load Tvj = 125 °C
980
VCC = 3600 V, IC = 400 A,
VGE = ±15 V, RG = 5.6 W,
Ls = 280 nH, inductive load
Tvj = 25 °C
Tvj = 125 °C
Tvj = 25 °C
Tvj = 125 °C
2250
2800
1340
2120
Turn-on switching energy
Turn-off switching energy
Eon
Eoff
mJ
mJ
VCC = 3600 V, IC = 400 A,
VGE = ±15 V, RG = 5.6 W,
Ls = 280 nH, inductive load
t
psc ≤ 10 μs, VGE = 15 V, Tvj = 125 °C,
Short circuit current
ISC
1800
A
VCC = 4400 V, VCEM CHIP ≤ 6500 V
Module stray inductance
Ls CE
20
0.1
nH
TC = 25 °C
TC = 125 °C
Resistance, terminal-chip
RCC’+EE’
mΩ
0.15
3)
Characteristic values according to IEC 60747 – 9
Collector-emitter saturation voltage is given at chip level
4)
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
Doc. No. 5SYA 1592-01 Jun 07
page 2 of 9
ABB [ THE ABB GROUP ]
