5SHY 42L6500
GCT Data
On-state (see Fig. 3, 4, 5, 6, 14, 15)
Maximum rated values 1)
Conditions
min
typ
max
Unit
Parameter
Symbol
Max. average on-state
current
IT(AV)M
Half sine wave, TC = 85 °C,
Double side cooled
1270
A
Max. RMS on-state current IT(RMS)
2000
40×103
A
A
Max. peak non-repetitive
surge on-state current
ITSM
tp = 3 ms, Tj = 125 °C, sine wave
after surge: VD = VR = 0 V
Limiting load integral
I2t
2.4×106 A2s
26×103
Max. peak non-repetitive
surge on-state current
ITSM
tp = 10 ms, Tj = 125 °C, sine wave
after surge: VD = VR = 0 V
A
Limiting load integral
I2t
3.38×106 A2s
17×103
Max. peak non-repetitive
surge on-state current
ITSM
tp = 30 ms, Tj = 125 °C, sine wave
after surge: VD = VR = 0 V
A
Limiting load integral
I2t
4.34×106 A2s
Stray inductance between LD
GCT and antiparallel diode
Only relevant for applications with
antiparallel diode to the IGCT
300
nH
Critical rate of rise of on-
state current
diT/dtcr For higher diT/dt and current lower
than 100 A an external retrigger puls
is required.
200
A/µs
Characteristic values
Parameter
Conditions
min
typ
3.8
max
4.1
Unit
V
Symbol
On-state voltage
VT
IT = 4000 A, Tj = 125 °C
Threshold voltage
Slope resistance
V(T0)
rT
Tj = 125 °C
IT = 1000...5000 A
1.9
2.0
V
0.48
0.54
mW
Turn-on switching (see Fig. 14, 15)
Maximum rated values 1)
Conditions
Symbol
min
min
typ
typ
max
Unit
Parameter
Critical rate of rise of on-
state current
diT/dtcr f = 0..500 Hz,Tj = 125 °C,IT = 3900 A
1000
A/µs
VD = 4000 V, ITM £ 5500 A
Characteristic values
Parameter
Conditions
max
Unit
µs
Symbol
Turn-on delay time
tdon
VD = 4000 V, Tj = 125 °C
IT = 4000 A, di/dt = VD / Li
Li = 4 µH
4
7
Turn-on delay time status
feedback
tdon SF
µs
CCL = 20 µF, LCL = 0.3 µH
Rise time
tr
1
µs
J
Turn-on energy per pulse
Eon
2.5
Turn-off switching (see Fig. 7, 8, 10, 14, 15)
Maximum rated values 1)
Conditions
min
min
typ
max
Unit
Parameter
Symbol
Max. controllable turn-off
current
ITGQM1
VD = 4000 V
4200
A
VDM £ VDRM,
ton > 100µs
Tj = 125°C,
RS = 0.35 W,
CCL = 20 µF,
Max. controllable turn-off
current
ITGQM2
VD = 4000 V
40µs < ton < 100µs
3900
A
LCL £ 0.3 µH
Characteristic values
Parameter
Conditions
typ
max
Unit
µs
Symbol
Turn-off delay time
tdoff
VD = 4000 V, Tj = 125 °C
DM £ VDRM, RS = 0.35 W
8
7
V
Turn-off delay time status
feedback
tdoff SF
µs
ITGQ = 4000 A, Li = 4 µH
CCL = 20 µF, LCL = 0.3 µH
Turn-off energy per pulse
Eoff
44
tbd
J
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
Doc. No. 5SYA1245-00 Aug 07
page 2 of 9
ABB [ THE ABB GROUP ]
