5SHX 04D4502
GCT Part
E
off [J]
1.5
IT [A]
Tj = 115 °C
600
Tj = 115°C
500
400
300
200
100
0
1.0
0.5
0.0
VD = 2700V
2.0
2.5
3.0
3.5
4.0
4.5
VT [V]
0
100
200
300
400
ITGQ [A]
Fig. 1
GCT on-state characteristics.
Fig. 2
GCT turn-off energy per pulse vs.
turn-off current.
I
TGQ [A]
500
400
300
200
100
0
Tj = 0..115 °C
≤
≤
VDM
VRM
VDRM
VRRM
µ
Li = 25
CCL = 0.5
CL = 1.0
Rs = 4.2
H
µ
F
µ
L
H
Ω
0
1000
2000
3000
4000
VD [V]
Fig. 3
Max. repetitive GCT turn-off current.
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
Doc. No. 5SYA1224-03 Jan. 02
page 5 of 9