5SHX 04D4502
GCT Data
On-state (see Fig. 1)
ITAVM
ITRMS
Max. average on-state current
130 A
205 A
2.1 kA
Half sine wave, TC = 85 °C
Max. RMS on-state current
tp
tp
=
=
10 ms Tj = 115 °C
Max. peak non-repetitive
surge current
ITSM
After surge:
VD = VR = 0V
3.8 kA
1 ms
23x103 A2s
7.3x103 A2s
3.4 V
tp
tp
IT
=
=
=
10 ms
1 ms
340 A
I2t
Limiting load integral
VT
VT0
rT
On-state voltage
Threshold voltage
Slope resistance
≤
1.8 V
Tj = 115 °C
IT
=
100 - 500 A
4.7
mΩ
Turn-on switching
f
IT
VD
IT
RS
CCL
=
500 Hz Tj
=
115 °C
Max. rate of rise of on-state
di/dtcrit
130 A/µs
current
=
=
=
=
=
340 A
VD = 3200 V
tdon
tr
Turn-on delay time
Rise time
3 µs
1 µs
10 µs
0.13 J
2700 V
Tj
=
115 °C
110 A/µs
25 µH
≤
≤
340 A di/dt =
ton (min) Min, on-time
4.2
Li
=
=
Ω
Eon
Turn-on energy per pulse
0.5 µF LCL
1 µH
≤
Turn-off switching (see Fig. 2, 3)
VDM
VD
VD
Tj
ITGQ
CCL
VDRM
Tj
2700 V LCL
2700 V VDM
115 °C Rs
=
≤
≤
=
=
≤
115 °C
1 µH
VDRM
≤
=
=
=
=
=
ITGQM Max. controllable turn-off current
340 A
tdoff
tf
Turn-off delay time
Fall time
6 µs
1 µs
10 µs
1.35 J
≤
≤
4.2
Ω
25 µH
1 µH
toff (min) Min. off-time
Eoff Turn-off energy per pulse
ITGQM
0.5 µF LCL
Li
≤
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
Doc. No. 5SYA1224-03 Jan. 02
page 2 of 9
ABB [ THE ABB GROUP ]
