5SGA 20H4502
Reverse avalanche capability
In operation with an antiparallel freewheeling diode, the GTO reverse voltage VR may exceed the rate
value VRRM due to stray inductance and diode turn-on voltage spike at high di/dt. The GTO is then
driven into reverse avalanche. This condition is not dangerous for the GTO provided avalanche time
and current are below 10 µs and 1000 A respectively. However, gate voltage must remain negative
during this time. Recommendation : VGR = 10… 15 V.
ABB Semiconductors AG reserves the right to change specifications without notice.
ABB Semiconductors AG
Fabrikstrasse 2
Doc. No. 5SYA 1210-01 Aug. 2000
CH-5600 Lenzburg, Switzerland
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