5SGA 20H4502
GTO Data
On-state
ITAVM
ITRMS
ITSM
Max. average on-state current
710 A
1115 A
13 kA
24 kA
Half sine wave, TC = 85 °C
Max. RMS on-state current
Max. peak non-repetitive
surge current
tP
tP
tP
=
=
=
10 ms Tj = 125°C
1 ms After surge:
I2t
Limiting load integral
A2s
10 ms VD = VR = 0V
0.85 106
0.29 106
A2s
tP
IT
=
=
1 ms
VT
VT0
rT
On-state voltage
Threshold voltage
Slope resistance
Holding current
3.50 V
1.80 V
0.85
2000 A
IT = 400 - 3000 A Tj = 125 °C
mΩ
50 A
IH
Tj = 25 °C
Gate
VGT
Gate trigger voltage
Gate trigger current
1.0 V
2.5 A
17 V
VD
RA
= 24 V
Tj = 25 °C
IGT
=
0.1 Ω
VGRM Repetitive peak reverse voltage
IGRM Repetitive peak reverse current
50 mA
VGR = VGRM
Turn-on switching
di/dtcrit Max. rate of rise of on-state
400 A/µs f = 200Hz IT = 2000 A, Tj = 125 °C
600 A/µs f = 1Hz IGM = 30 A, diG/dt = 20 A/µs
0.5 VDRM Tj 125 °C
di/dt = 200 A/µs
diG/dt = 20 A/µs
current
td
Delay time
2.0 µs
6.0 µs
VD
IT
=
=
=
=
=
tr
Rise time
2000 A
30 A
ton(min)
Eon
Min. on-time
80 µs
IGM
CS
Turn-on energy per pulse
2.50 Ws
4 µF RS
=
5
Ω
Turn-off switching
ITGQM
Max controllable turn-off
2000 A
VDM = VDRM
CS = 4 µF
diGQ/dt = 30 A/µs
current
LS
0.3 µH
VDRM
≤
ts
Storage time
22.0 µs
3.0 µs
80 µs
VD = ½ VDRM VDM
Tj
ITGQ = ITGQM
=
tf
Fall time
=
125 °C diGQ/dt =
30 A/µs
toff(min)
Eoff
IGQM
Min. off-time
Turn-off energy per pulse
Peak turn-off gate current
7.5 Ws
725 A
CS
LS
=
4 µF RS
0.3 µH
=
5
Ω
≤
ABB Semiconductors AG reserves the right to change specifications without notice.
Doc. No. 5SYA 1210-01 Aug. 2000
page 2 of 9
ABB [ THE ABB GROUP ]
