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VDS6632A4A-5 参数 Datasheet PDF下载

VDS6632A4A-5图片预览
型号: VDS6632A4A-5
PDF下载: 下载PDF文件 查看货源
内容描述: 同步DRAM ( 512K ×32位×4银行) [Synchronous DRAM(512K X 32 Bit X 4 Banks)]
分类和应用: 动态存储器
文件页数/大小: 8 页 / 596 K
品牌: ADATA [ ADATA Technology Co., Ltd. ]
 浏览型号VDS6632A4A-5的Datasheet PDF文件第1页浏览型号VDS6632A4A-5的Datasheet PDF文件第2页浏览型号VDS6632A4A-5的Datasheet PDF文件第3页浏览型号VDS6632A4A-5的Datasheet PDF文件第4页浏览型号VDS6632A4A-5的Datasheet PDF文件第5页浏览型号VDS6632A4A-5的Datasheet PDF文件第7页浏览型号VDS6632A4A-5的Datasheet PDF文件第8页  
V-Data  
VDS6632A4A  
AC Characteristics  
-5  
-5.5  
Max  
-6  
Parameter  
Symbol  
Unit  
ns  
Note  
Min  
5
Max  
Min  
5.5  
10  
Min  
6
Max  
System clock  
Cycle time  
/CAS Latency = 3 tCK3  
/CAS Latency = 2 tCK2  
1000  
1000  
1000  
10  
2
10  
2.5  
2.5  
-
Clock high pulse width  
Clock low pulse width  
tCHW  
tCLW  
-
-
2.25  
2.25  
-
-
-
-
ns  
ns  
1
1
2
-
Access time form /CAS Latency = 3 tAC3  
-
4.5  
6
-
5
6
-
5.5  
ns  
ns  
2
clock  
/CAS Latency = 2 tAC2  
-
-
-
6
Operation  
tRC  
55  
55  
15  
40  
15  
10  
1
55  
60  
60  
18  
42  
18  
12  
1
-
/RAS cycle time  
Auto Refresh  
tRRC  
tRCD  
tRAS  
tRP  
-
55  
-
-
/RAS to /CAS delay  
-
16.5  
-
-
ns  
ns  
/RAS active time  
100K 38.5 100K  
100K  
/RAS precharge time  
/RAS to /RAS bank active delay  
/CAS to /CAS delay  
-
-
16.5  
11  
1
-
-
-
-
ns  
tRRD  
tCCD  
tWTL  
tDPL  
tDAL  
tDQZ  
tDQM  
tOH  
ns  
-
-
-
CLK  
CLK  
CLK  
CLK  
CLK  
CLK  
ns  
Write command to data – in delay  
Data – in to precharge command  
Data – in active command  
DQM to data – out Hi-Z  
DQM to data – in mask  
Data – out hold time  
Data – input setup time  
Data – input hold time  
Address setup time  
0
-
0
-
0
-
1
-
1
-
1
-
5
-
5
-
5
-
2
-
2
-
2
-
0
-
0
-
0
-
1.5  
1.5  
1
-
2
-
2
-
tDS  
-
1.5  
1
-
1.5  
1
-
ns  
1
1
1
1
1
1
1
1
tDH  
-
-
-
ns  
tAS  
1.5  
1
-
1.5  
1
-
1.5  
1
-
ns  
Address hold time  
tAH  
-
-
-
ns  
CKE setup time  
tCKS  
tCKH  
tCS  
1.5  
1
-
1.5  
1
-
1.5  
1
-
ns  
CKE hold time  
-
-
-
ns  
Command setup time  
Command hold time  
CLK to data output in low Z-time  
MRS to new command  
Power down exit time  
Self refresh exit time  
Refresh time  
1.5  
1
-
1.5  
1
-
1.5  
1
-
ns  
tCH  
-
-
-
ns  
tOLZ  
tMRD  
tPDE  
tSRE  
tREF  
1
-
1
-
1
-
ns  
2
-
2
-
2
-
CLK  
CLK  
CLK  
ms  
1
-
1
-
1
-
1
-
1
-
1
-
3
-
64  
-
64  
-
64  
Note : 1. Assume tR / tF (input rise and fall time) is 1 ns.  
2. Access times to be measured with input signals of 1v / ns edge rate.  
3.A new command can be given tRRC after self refresh exit.  
Rev 1.0 April, 2001  
6