品牌 |
型号 |
描述和应用 |
下载 |
货源 |
MICROSEMI
|
APA450-FGG144I
中文翻译
|
Field Programmable Gate Array, 450000 Gates, 180MHz, 12288-Cell, CMOS, PBGA144, 1 MM PITCH, ROHS COMPLIANT, FBGA-144 时钟栅可编程逻辑 |
|
|
MICROSEMI
|
APA600
中文翻译
|
ProASICPLUS Flash Family FPGAs ProASICPLUS闪存系列FPGA 闪存 |
|
|
MICROSEMI
|
APA600-BG456I
中文翻译
|
Field Programmable Gate Array, 600000 Gates, 180MHz, 21504-Cell, CMOS, PBGA456, 1.27 MM PITCH, PLASTIC, BGA-456 时钟栅可编程逻辑 |
|
|
MICROSEMI
|
APA600-BGG456
中文翻译
|
Field Programmable Gate Array, 600000 Gates, 180MHz, 21504-Cell, CMOS, PBGA456, 1.27 MM PITCH, ROHS COMPLIANT, PLASTIC, BGA-456 时钟栅可编程逻辑 |
|
|
MICROSEMI
|
APA600-BGG456I
中文翻译
|
Field Programmable Gate Array, 600000 Gates, 180MHz, 21504-Cell, CMOS, PBGA456, 1.27 MM PITCH, ROHS COMPLIANT, PLASTIC, BGA-456 时钟栅可编程逻辑 |
|
|
MICROSEMI
|
APA600-CQ208B
中文翻译
|
Field Programmable Gate Array, 600000 Gates, 180MHz, 21504-Cell, CMOS, CQFP208, 1.05 MM PITCH, CERAMIC, QFP-208 时钟栅可编程逻辑 |
|
|
MICROSEMI
|
APA600-CQ208M
中文翻译
|
Field Programmable Gate Array, 600000 Gates, 180MHz, 21504-Cell, CMOS, CQFP208, 1.05 MM PITCH, CERAMIC, QFP-208 时钟栅可编程逻辑 |
|
|
MICROSEMI
|
APA600-FG256I
中文翻译
|
Field Programmable Gate Array, 600000 Gates, 180MHz, 21504-Cell, CMOS, PBGA256, 1 MM PITCH, FBGA-256 时钟栅可编程逻辑 |
|
|
MICROSEMI
|
APA600-FG256IX95
中文翻译
|
Field Programmable Gate Array, 600000 Gates, 180MHz, CMOS, PBGA256, 1 MM PITCH, FBGA-256 时钟栅可编程逻辑 |
|
|
MICROSEMI
|
APA600-FG484
中文翻译
|
Field Programmable Gate Array, 600000 Gates, 180MHz, 21504-Cell, CMOS, PBGA484, 1 MM PITCH, FBGA-484 时钟栅可编程逻辑 |
|
|
MICROSEMI
|
APA600-FG484I
中文翻译
|
Field Programmable Gate Array, 600000 Gates, 180MHz, 21504-Cell, CMOS, PBGA484, 1 MM PITCH, FBGA-484 时钟栅可编程逻辑 |
|
|
MICROSEMI
|
APA600-FGG256
中文翻译
|
Field Programmable Gate Array, 600000 Gates, 180MHz, 21504-Cell, CMOS, PBGA256, 1 MM PITCH, ROHS COMPLIANT, FBGA-256 时钟栅可编程逻辑 |
|
|
MICROSEMI
|
APA600-FGG256M
中文翻译
|
Field Programmable Gate Array, 600000 Gates, 180MHz, 21504-Cell, CMOS, PBGA256, 1 MM PITCH, ROHS COMPLIANT, FBGA-256 时钟栅可编程逻辑 |
|
|
MICROSEMI
|
APA600-FGG484A
中文翻译
|
Field Programmable Gate Array, 21504-Cell, CMOS, PBGA484, 栅可编程逻辑 |
|
|
MICROSEMI
|
APA600-FGG484I
中文翻译
|
Field Programmable Gate Array, 600000 Gates, 180MHz, 21504-Cell, CMOS, PBGA484, 1 MM PITCH, ROHS COMPLIANT, FBGA-484 时钟栅可编程逻辑 |
|
|
MICROSEMI
|
APA600-PQ208
中文翻译
|
Field Programmable Gate Array, 600000 Gates, 180MHz, 21504-Cell, CMOS, PQFP208, 0.50 MM PITCH, PLASTIC, QFP-208 时钟栅可编程逻辑 |
|
|
MICROSEMI
|
APA600-PQ208C
中文翻译
|
FPGA, PQFP208, 0.50 MM PITCH, PLASTIC, QFP-208 现场可编程门阵列闪存可编程逻辑栅时钟 |
|
|
MICROSEMI
|
APA600-PQ208ES
中文翻译
|
Field Programmable Gate Array, 180MHz, 21504-Cell, CMOS, PQFP208, 现场可编程门阵列闪存可编程逻辑栅时钟 |
|
|
MICROSEMI
|
APA600-PQ208I
中文翻译
|
ProASICPLUS Flash Family FPGAs ProASICPLUS闪存系列FPGA 现场可编程门阵列闪存可编程逻辑栅时钟 |
|
|
MICROSEMI
|
APA600-PQ208M
中文翻译
|
Field Programmable Gate Array, 600000 Gates, 180MHz, 21504-Cell, CMOS, PQFP208, 0.50 MM PITCH, PLASTIC, QFP-208 现场可编程门阵列闪存可编程逻辑栅时钟 |
|
|
MICROSEMI
|
APA600-PQ208PP
中文翻译
|
Field Programmable Gate Array, 180MHz, 21504-Cell, CMOS, PQFP208, 现场可编程门阵列闪存可编程逻辑栅时钟 |
|
|
MICROSEMI
|
APA600-PQG208
中文翻译
|
Field Programmable Gate Array, 600000 Gates, 180MHz, 21504-Cell, CMOS, PQFP208, 0.50 MM PITCH, ROHS COMPLIANT, PLASTIC, QFP-208 时钟栅可编程逻辑 |
|
|
MICROSEMI
|
APA6001
中文翻译
|
ProASICPLUS Flash Family FPGAs ProASICPLUS闪存系列FPGA 闪存 |
|
|
MICROSEMI
|
APA750
中文翻译
|
ProASICPLUS Flash Family FPGAs ProASICPLUS闪存系列FPGA 闪存 |
|
|
MICROSEMI
|
APA750-BG456IX95
中文翻译
|
Field Programmable Gate Array, 750000 Gates, 180MHz, CMOS, PBGA456, 1.27 MM PITCH, PLASTIC, BGA-456 栅 |
|
|
MICROSEMI
|
APA750-FG896A
中文翻译
|
Field Programmable Gate Array, 32768-Cell, CMOS, PBGA896, 栅可编程逻辑 |
|
|
MICROSEMI
|
APA750-PQG208A
中文翻译
|
Field Programmable Gate Array, 32768-Cell, CMOS, PQFP208, 栅可编程逻辑 |
|
|
MICROSEMI
|
APL1001P
中文翻译
|
Power Field-Effect Transistor, 1-Element, Metal-oxide Semiconductor FET, 局域网脉冲晶体管 |
|
|
MICROSEMI
|
APL502B2
中文翻译
|
LINEAR MOSFET 线性MOSFET 晶体晶体管功率场效应晶体管脉冲 |
|
|
MICROSEMI
|
APL502B2G
中文翻译
|
Power Field-Effect Transistor, 58A I(D), 500V, 0.09ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, TMAX-3 晶体晶体管功率场效应晶体管脉冲 |
|
|
|