Typical Characteristics (continued)
10
300
250
200
150
100
50
ID = 3.5 A
VDS = 10V
15V
f = 1 MHz
VGS = 0 V
8
CISS
20V
6
4
2
0
COSS
CRSS
0
0
1
2
3
4
0
5
10
15
20
Qg, GATE CHARGE (nC)
VDS , DRAIN TO SOURCE VOLTAGE (V)
Figure 7. Gate Charge Characteristics.
Figure 8. Capacitance Characteristics.
100
50
40
30
20
10
0
SINGLE PULSE
RqJA = 135°C/W
100ms
TA = 25°C
RDS(ON) LIMIT
10
1
1ms
10ms
100ms
1s
10s
DC
VGS = 10V
SINGLE PULSE
0.1
0.01
R
qJA = 135oC/W
TA = 25oC
0.001
0.01
0.1
1
10
100
0.1
1
10
100
t1, TIME (sec)
VDS , DRAIN-SOURCE VOLTAGE (V)
Figure 9. Maximum Safe Operating Area.
Figure 10. Single Pulse Maximum
Power Dissipation.
1
D = 0.5
RqJA(t) = r(t) + RqJA
0.2
RqJA = 135oC/W
0.1
0.1
0.05
P(pk)
0.02
0.01
t1
0.01
t2
TJ - TA = P * R JA(t)
q
Duty Cycle, D = t1/ t2
SINGLE PULSE
0.001
0.0001
0.001
0.01
0.1
1
10
100
1000
t1, TIME (sec)
Figure 11. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1c.
Transient thermal response will change depending on the circuit board design.
FDS6961AZ Rev C (W)
ETC [ ETC ]
