Philips Semiconductors
Product specification
NPN general purpose transistors
THERMAL CHARACTERISTICS
SYMBOL
R
th j-a
Note
1. Transistor mounted on an FR4 printed-circuit board.
CHARACTERISTICS
T
j
= 25
°C
unless otherwise specified.
SYMBOL
I
CBO
I
EBO
h
FE
PARAMETER
collector cut-off current
emitter cut-off current
DC current gain
BC846A; BC847A
BC846B; BC847B
BC847C
DC current gain
BC846
BC847
BC846A;BC847A
BC846B; BC847B
BC847C
V
CEsat
V
BEsat
V
BE
C
c
f
T
F
Notes
1. V
BEsat
decreases by about 1.7 mV/K with increasing temperature.
2. V
BE
decreases by about 2 mV/K with increasing temperature.
collector-emitter saturation
voltage
base-emitter saturation voltage
base-emitter voltage
collector capacitance
transition frequency
noise figure
I
C
= 10 mA; I
B
= 0.5 mA
I
C
= 100 mA; I
B
= 5 mA
I
C
= 10 mA; I
B
= 0.5 mA; note 1
I
C
= 100 mA; I
B
= 5 mA; note 1
I
C
= 2 mA; V
CE
= 5 V; note 2
I
C
= 10 mA; V
CE
= 5 V; note 2
I
E
= i
e
= 0; V
CB
= 10 V; f = 1 MHz;
I
C
= 200
µA;
V
CE
= 5 V; R
S
= 2 kΩ;
f = 1 kHz; B = 200 Hz
I
C
= 2 mA; V
CE
= 5 V;
see Figs 2, 3 and 4
CONDITIONS
I
E
= 0; V
CB
= 30 V
I
E
= 0; V
CB
= 30 V; T
j
= 150
°C
I
C
= 0; V
EB
= 5 V
I
C
= 10
µA;
V
CE
= 5 V;
see Figs 2, 3 and 4
MIN.
−
−
−
−
−
−
110
110
110
200
420
−
−
−
−
580
−
−
−
PARAMETER
thermal resistance from junction to ambient
CONDITIONS
note 1
BC846; BC847
VALUE
500
UNIT
K/W
TYP.
−
−
−
90
150
270
−
−
180
290
520
90
200
700
900
660
−
2.5
−
2
MAX.
15
5
100
−
−
−
450
800
220
450
800
250
600
−
−
700
770
−
−
10
UNIT
nA
µA
nA
mV
mV
mV
mV
mV
mV
pF
MHz
dB
I
C
= 10 mA; V
CE
= 5 V; f = 100 MHz; 100
1999 Apr 23
3
ETC [ ETC ]
