Philips Semiconductors
Product specification
NPN general purpose transistor
THERMAL CHARACTERISTICS
SYMBOL
R
th j-a
Note
1. Transistor mounted on an FR4 printed-circuit board.
CHARACTERISTICS
T
j
= 25
°C
unless otherwise specified.
SYMBOL
I
CBO
I
EBO
h
FE
PARAMETER
collector cut-off current
emitter cut-off current
DC current gain
BC817
BC817-16
BC817-25
BC817-40
h
FE
V
CEsat
V
BE
C
c
f
T
Notes
1. Pulse test: t
p
≤
300
µs; δ ≤
0.02.
2. V
BE
decreases by approx. 2 mV/K with increasing temperature.
DC current gain
base-emitter voltage
collector capacitance
transition frequency
I
C
= 500 mA; V
CE
= 1 V; note 1
I
C
= 500 mA; V
CE
= 1 V; note 2
I
E
= i
e
= 0; V
CB
= 10 V; f = 1 MHz;
I
C
= 10 mA; V
CE
= 5 V; f = 100 MHz;
collector-emitter saturation voltage I
C
= 500 mA; I
B
= 50 mA; note 1
CONDITIONS
I
E
= 0; V
CB
= 20 V
I
E
= 0; V
CB
= 20 V; T
j
= 150
°C
I
C
= 0; V
EB
= 5 V
I
C
= 100 mA; V
CE
= 1 V; note 1;
see Figs 2, 3 and 4
MIN.
−
−
−
100
100
160
250
40
−
−
−
100
TYP.
−
−
−
−
−
−
−
−
−
−
5
−
PARAMETER
thermal resistance from junction to ambient
CONDITIONS
note 1
VALUE
500
BC817
UNIT
K/W
MAX. UNIT
100
5
100
600
250
400
600
−
700
1.2
−
−
mV
V
pF
MHz
nA
µA
nA
1999 Jun 01
3