BAV99WT1, BAV99RWT1
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation
FR–5 Board, (Note 1.) T
A
= 25°C
Derate above 25°C
Thermal Resistance Junction to Ambient
Total Device Dissipation
Alumina Substrate, (Note 2.) T
A
= 25°C
Derate above 25°C
Thermal Resistance Junction to Ambient
Junction and Storage Temperature
Symbol
P
D
Max
200
1.6
R
qJA
P
D
625
300
2.4
R
qJA
T
J
, T
stg
417
–65 to +150
Unit
mW
mW/°C
°C/W
mW
mW/°C
°C/W
°C
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless otherwise noted) (Each Diode)
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Reverse Breakdown Voltage (I
(BR)
= 100
µA)
Reverse Voltage Leakage Current (V
R
= 70 Vdc)
(V
R
= 25 Vdc, T
J
= 150°C)
(V
R
= 70 Vdc, T
J
= 150°C)
Diode Capacitance
(V
R
= 0, f = 1.0 MHz)
Forward Voltage
(I
F
= 1.0 mAdc)
(I
F
= 10 mAdc)
(I
F
= 50 mAdc)
(I
F
= 150 mAdc)
V
(BR)
I
R
70
–
–
–
–
–
–
–
–
–
–
–
2.5
30
50
1.5
715
855
1000
1250
6.0
1.75
Vdc
mAdc
C
D
V
F
pF
mVdc
Reverse Recovery Time (I
F
= I
R
= 10 mAdc, i
R(REC)
= 1.0 mAdc) (Figure 1) R
L
= 100
W
Forward Recovery Voltage (I
F
= 10 mA, t
r
= 20 ns)
1. FR–5 = 1.0
0.75
0.062 in.
2. Alumina = 0.4
0.3
0.024 in. 99.5% alumina.
t
rr
V
FR
ns
V
820
Ω
+10 V
2k
100
µH
0.1
µF
DUT
50
Ω
OUTPUT
PULSE
GENERATOR
50
Ω
INPUT
SAMPLING
OSCILLOSCOPE
I
F
0.1
µF
t
r
10%
t
p
t
I
F
t
rr
t
90%
V
R
I
R
INPUT SIGNAL
i
R(REC)
= 1 mA
OUTPUT PULSE
(I
F
= I
R
= 10 mA; measured
at i
R(REC)
= 1 mA)
Notes: (a) A 2.0 kΩ variable resistor adjusted for a Forward Current (I
F
) of 10 mA.
Notes:
(b) Input pulse is adjusted so I
R(peak)
is equal to 10 mA.
Notes:
(c) t
p
» t
rr
Figure 1. Recovery Time Equivalent Test Circuit
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ETC [ ETC ]
