TSP5N60M / TSF5N60M
Electrical Characteristics
T = 25°C unless otherwise noted
C
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
Off Characteristics
BVDSS
VGS = 0 V, ID = 250 A
Drain-Source Breakdown Voltage
600
--
--
--
--
V
BVDSS
Breakdown Voltage Temperature
ID = 250 A, Referenced to 25°C
0.6
V/°C
/
TJ Coefficient
IDSS
VDS = 600 V, VGS = 0 V
VDS = 480 V, TC = 125°C
VGS = 30 V, VDS = 0 V
VGS = -30 V, VDS = 0 V
--
--
--
--
--
--
--
--
1
A
A
nA
nA
Zero Gate Voltage Drain Current
10
IGSSF
IGSSR
Gate-Body Leakage Current, Forward
Gate-Body Leakage Current, Reverse
100
-100
On Characteristics
VGS(th)
VDS = VGS, ID = 250 A
Gate Threshold Voltage
2.0
--
--
5.0
2.5
-
V
S
RDS(on)
Static Drain-Source
On-Resistance
VGS = 10 V, ID
=
2.25 A
2.0
4.5
YFS
VDS = 20V, ID = 2.25 A
Forward Transconductance
-
Dynamic Characteristics
Ciss
Coss
Crss
Input Capacitance
--
--
--
560
55
7
--
--
--
pF
pF
pF
VDS = 25 V, VGS = 0 V,
f = 1.0 MHz
Output Capacitance
Reverse Transfer Capacitance
Switching Characteristics
td(on)
tr
td(off)
tf
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
--
--
--
--
--
--
--
10
40
40
50
16
2.5
6.5
--
--
--
--
-
ns
ns
VDD = 300 V, ID
G = 25
=
=
4.5A,
R
ns
(Note 4, 5)
(Note 4, 5)
ns
Qg
nC
nC
nC
VDS = 480 V, ID
GS = 10 V
4.5 A,
Qgs
Qgd
--
--
V
Drain-Source Diode Characteristics and Maximum Ratings
IS
Maximum Continuous Drain-Source Diode Forward Current
--
--
--
--
--
--
--
4.5
18.0
1.4
--
A
A
ISM
VSD
trr
Maximum Pulsed Drain-Source Diode Forward Current
VGS = 0 V, IS = 4.5 A
Drain-Source Diode Forward Voltage
Reverse Recovery Time
--
V
VGS = 0 V, IS = 4.5 A,
300
2.0
ns
C
dIF / dt = 100 A/s
(Note 4)
Qrr
Reverse Recovery Charge
--
Notes:
1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. L = 17 mH, I
=
4.5 A, V = 50V, R = 25 Starting T = 25°C
AS
DD
G
J
3. I
4.5 A, di/dt 200A/s, V BV
Starting T = 25°C
SD
DD
DSS,
J
4. Pulse Test : Pulse width 300s, Duty cycle 2%
5. Essentially independent of operating temperature
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