Inchange Semiconductor
Product Specification
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
TIP42
TIP42A
I
C
=30mA; I
B
=0
TIP42B
TIP42C
V
CEsat
V
BE
Collector-emitter saturation voltage
Base-emitter on voltage
TIP42
TIP42A
TIP42B
I
C
=-6A I
B
=-0.6A
I
C
=-6A ; V
CE
=-4V
V
CE
=-40V; V
EB
=0
V
CE
=-60V; V
EB
=0
V
CE
=-80V; V
EB
=0
CONDITIONS
TIP42/42A/42B/42C
MIN
-40
-60
TYP.
MAX
UNIT
V
CEO(SUS)
Collector-emitter
sustaining voltage
V
-80
-100
-1.5
-2.0
V
V
I
CES
Collector
cut-off current
I
CEO
I
EBO
h
FE-1
h
FE-2
f
T
导�½�
半
ND
固电
ICO
SEM
GE
HAN
INC
TIP42C
V
CE
=-100V; V
EB
=0
V
CE
=-30V; I
B
=0
Collector
cut-off current
TIP41/41A
TIP41B/41C
V
CE
=-60V; I
B
=0
V
EB
=-5V; I
C
=0
Emitter cut-off current
DC current gain
DC current gain
Transiton frequency
I
C
=-0.3A ; V
CE
=-4V
I
C
=-3A ; V
CE
=-4V
I
C
=-0.5A ; V
CE
=-10V
OR
CT
U
-0.7
-1.0
-0.4
mA
mA
mA
30
15
3
75
MHz
2
ETC [ ETC ]
