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TIP122 参数 Datasheet PDF下载

TIP122图片预览
型号: TIP122
PDF下载: 下载PDF文件 查看货源
内容描述: 达林顿晶体管 [Darlington Transistors]
分类和应用: 晶体晶体管达林顿晶体管局域网
文件页数/大小: 6 页 / 403 K
品牌: ETC [ ETC ]
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TIP120, 121, 122, 125, 126, 127
Darlington Transistors
Features:
Designed for general-purpose amplifier and low speed switching applications.
Collector-Emitter sustaining voltage-V
CEO(sus)
= 60V (Minimum) - TIP120, TIP125
80V (Minimum) - TIP121, TIP126
100V (Minimum) - TIP122, TIP127.
Collector-Emitter saturation voltage-V
CE(sat)
= 2.0V (Maximum) at I
C
= 3.0A.
Monolithic construction with built-in-base-emitter shunt resistors.
Minimum
A
B
C
D
E
F
G
H
Pin 1. Base
2. Collector
3. Emitter
4. Collector (Case)
I
J
K
L
M
O
14.68
9.78
5.01
13.06
3.57
2.42
1.12
0.72
4.22
1.14
2.20
0.33
2.48
3.70
Maximum
15.31
10.42
6.52
14.62
4.07
3.66
1.36
0.96
4.98
1.38
2.97
0.55
2.98
3.90
NPN
TIP120
TIP121
TIP122
PNP
TIP 125
TIP 126
TIP 127
5.0 Ampere
Darlington
Complementary Silicon
Power Transistors
60 - 100 Volts
65 Watts
TO-220
Dimensions : Millimetres
Maximum Ratings
Characteristic
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current -Continuous
-Peak
Base Current
Total Power Dissipation at T
C
= 25°C
Derate above 25°C
Operating and Storage Junction
Temperature Range
Symbol
V
CEO
V
CBO
V
EBO
I
C
I
CM
I
B
P
D
T
J
, T
STG
TIP120
TIP125
60
TIP121
TIP126
80
5.0
5.0
8.0
120
65
0.52
-65 to +150
A
mA
W
W/°C
°C
TIP122
TIP127
100
Unit
V
Thermal Characteristics
Characteristic
Thermal Resistance Junction to Case
Symbol
Rθjc
Maximum
1.92
Unit
°C/W
Page 1
30/05/05 V1.0