S8 050
TRANSISTOR(NPN)
SOT-23
FEATURES
Complimentary to S8550
Collector Current: I
C
=0.5A
MARKING: J3Y
1. BASE
2. EMITTER
3. COLLECTOR
MAXIMUM RATINGS (T
A
=25℃ unless otherwise noted)
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
T
j
T
stg
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Collector Dissipation
Junction Temperature
Storage Temperature
Parameter
Value
40
25
5
0.5
0.3
150
-55-150
Units
V
V
V
A
W
℃
℃
ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
Symbol
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
EBO
H
FE(1)
DC current gain
H
FE(2)
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
V
CE
(sat)
V
BE
(sat)
f
T
V
CE
=1V,
I
C
= 500mA
50
0.6
1.2
150
V
V
MHz
Test
conditions
MIN
40
25
5
0.1
0.1
120
350
TYP
MAX
UNIT
V
V
V
I
C
= 100
μ
A, I
E
=0
I
C
=1mA, I
B
=0
I
E
=100
μ
A, I
C
=0
V
CB
=40 V , I
E
=0
V
EB
= 5V ,
V
CE
=1V,
I
C
=0
I
C
= 50mA
μ
A
μ
A
I
C
=500 mA, I
B
= 50mA
I
C
=500 mA, I
B
= 50mA
V
CE
=6V,
I
C
= 20mA
f=
30MHz
CLASSIFICATION OF
Rank
Range
h
FE(1)
L
120-200
H
200-350
１
JinYu
semiconductor
www.htsemi.com
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