Philips Semiconductors
Product specification
N-channel TrenchMOS transistor
Logic level FET
PHP55N04LT, PHB55N04LT
PHD55N04LT
50
45
40
35
30
25
Drain Current, ID (A)
VGS = 10 V
5V
4.5 V
Tj = 25 C
30
Transconductance, gfs (S)
VDS > ID X RDS(ON)
25
Tj = 25 C
20
3V
15
2.8 V
175 C
20
15
10
5
0
0
0.2
0.4
0.6
0.8
1
1.2
1.4
Drain-Source Voltage, VDS (V)
1.6
1.8
2.6 V
2.4 V
2.2 V
2V
2
0
0
5
10
15
20
25
Drain current, ID (A)
30
35
40
10
5
Fig.5. Typical output characteristics, T
j
= 25 ˚C.
I
D
= f(V
DS
); parameter V
GS
Fig.8. Typical transconductance, T
j
= 25 ˚C.
g
fs
= f(I
D
); conditions: V
DS
= 25 V
Normalised On-state Resistance
Drain-Source On Resistance, RDS(on) (Ohms)
0.1
0.09
0.08
3V
0.07
0.06
0.05
0.04
0.03
5V
0.02
0.01
0
0
5
10
15
20
25
30
Drain Current, ID (A)
35
40
45
50
VGS =4.5 V
2.2 V
2.4 V
2.6 V
2.8V
Tj = 25 C
10V
2
1.9
1.8
1.7
1.6
1.5
1.4
1.3
1.2
1.1
1
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
-60
-40
-20
0
20
40
60
80
100
Junction temperature, Tj (C)
120
140
160
180
Fig.6. Typical on-state resistance, T
j
= 25 ˚C.
R
DS(ON)
= f(I
D
); parameter V
GS
Fig.9. Normalised drain-source on-state resistance.
a = R
DS(ON)
/R
DS(ON)25 ˚C
= f(T
j
)
Threshold Voltage, VGS(TO) (V)
2.25
2
1.75
maximum
Drain current, ID (A)
40
VDS > ID X RDS(ON)
35
30
1.5
25
1.25
typical
20
1
minimum
15
0.75
10
175 C
5
0
0
0.5
1
1.5
2
2.5
3
3.5
4
4.5
5
Gate-source voltage, VGS (V)
Tj = 25 C
0.5
0.25
0
-60
-40
-20
0
20
40
60
80
100
120
140
160
180
Junction Temperature, Tj (C)
Fig.7. Typical transfer characteristics.
I
D
= f(V
GS
) ; conditions: V
DS
= 25 V; parameter T
j
Fig.10. Gate threshold voltage.
V
GS(TO)
= f(T
j
); conditions: I
D
= 1 mA; V
DS
= V
GS
January 2001
4
Rev 1.000
ETC [ ETC ]
