2-3 IGBT
Electrical Characteristics (Ta=25°C)
Mass
(g)
td(on)
tr
td(off)
tf
Qg
Qge Qgc
VF
(V)
trr
Package
Conditions
Conditions
Conditions
Conditions
di/dt
(A) (A/µs)
(ns)
typ
(ns)
typ
(ns)
typ
(ns)
typ
I
C
V
CE
(nC) (nC) (nC)
I
C
V
CE
V
GE
IF
(µs)
IF
(A)
(V)
typ
120
65
35
65
35
35
65
65
typ
30
typ
30
(A)
(V)
(V)
typ
max
(A)
typ
130
70
340
300
55
200
120
210
180
220
190
200
120
30 300 L Load
30 300 L Load
20 150 R Load
60 250 R Load
20 200 R Load
20 300 R Load
50 300 L Load
50 300 L Load
30
300
300
150
250
200
300
300
300
15
TO3PF(FM100) 6.5
TO3PF(FM100) 6.5
TO220F(FM20) 2.0
TO220F(FM20) 2.0
TO220F(FM20) 2.0
TO220F(FM20) 2.0
100
15
20
15
25
75
75
80
30
90
35
60
70
70
20
8
20
10
20
10
9
30
20
60
20
20
50
50
15
15
15
15
15
15
15
90
10
8
55
70
6
250
250
15
15
20
20
1.2
1.2
1.6
1.6
30
30
0.3
0.3
30
30
100 TO3P(MT100) 6.0 Built-in Di
100 TO3P(MT100) 6.0 Built-in Di
Transistors
169
ETC [ ETC ]
