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AT45DB161D-SU-2.5 参数 Datasheet PDF下载

AT45DB161D-SU-2.5图片预览
型号: AT45DB161D-SU-2.5
PDF下载: 下载PDF文件 查看货源
内容描述: 16兆2.5V或2.7V的DataFlash [16-megabit 2.5V or 2.7V DataFlash]
分类和应用:
文件页数/大小: 51 页 / 2128 K
品牌: ETC [ ETC ]
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Atmel AT45DB161D
6.4
Main Memory Page Read
A main memory page read allows the user to read data directly from any one of the 4,096 pages in the main
memory, bypassing both of the data buffers and leaving the contents of the buffers unchanged. To start a page
read from the standard Atmel
®
DataFlash page size (528-bytes), an opcode of D2H must be clocked into the
device followed by three address bytes (which comprise the 24-bit page and byte address sequence) and four
don’t care bytes. The first 12 bits (PA11 - PA0) of the 22-bit address sequence specify the page in main memory to
be read, and the last 10 bits (BA9 - BA0) of the 22-bit address sequence specify the starting byte address within
that page. To start a page read from the binary page size (512-bytes), the opcode D2H must be clocked into the
device followed by three address bytes and four don’t care bytes. The first 12 bits (A20 - A9) of the 21-bits
sequence specify which page of the main memory array to read, and the last nine bits (A8 - A0) of the 21-bits
address sequence specify the starting byte address within the page. The don’t care bytes that follow the address
bytes are sent to initialize the read operation. Following the don’t care bytes, additional pulses on SCK result in
data being output on the SO (serial output) pin. The CS pin must remain low during the loading of the opcode, the
address bytes, the don’t care bytes, and the reading of data. When the end of a page in main memory is reached,
the device will continue reading back at the beginning of the same page. A low-to-high transition on the CS pin will
terminate the read operation and tri-state the output pin (SO). The maximum SCK frequency allowable for the Main
Memory Page Read is defined by the f
SCK
specification. The Main Memory Page Read bypasses both data buffers
and leaves the contents of the buffers unchanged.
6.5
Buffer Read
The SRAM data buffers can be accessed independently from the main memory array, and utilizing the Buffer Read
Command allows data to be sequentially read directly from the buffers. Four opcodes, D4H or D1H for buffer 1 and
D6H or D3H for buffer 2 can be used for the Buffer Read Command. The use of each opcode depends on the
maximum SCK frequency that will be used to read data from the buffer. The D4H and D6H opcode can be used at
any SCK frequency up to the maximum specified by f
CAR1
. The D1H and D3H opcode can be used for lower
frequency read operations up to the maximum specified by f
CAR2
.
To perform a buffer read from the standard DataFlash buffer (528-bytes), the opcode must be clocked into the
device followed by three address bytes comprised of 14 don’t care bits and 10 buffer address bits (BFA9 - BFA0).
To perform a buffer read from the binary buffer (512-bytes), the opcode must be clocked into the device followed
by three address bytes comprised of 15 don’t care bits and nine buffer address bits (BFA8 - BFA0). Following the
address bytes, one don’t care byte must be clocked in to initialize the read operation. The CS pin must remain low
during the loading of the opcode, the address bytes, the don’t care bytes, and the reading of data. When the end of
a buffer is reached, the device will continue reading back at the beginning of the buffer. A low-to-high transition on
the CS pin will terminate the read operation and tri-state the output pin (SO).
7
3500N–DFLASH–05/10